| 2009-07-01 | Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots | Dasika, V. D.; Goldman, R. S.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I. |
| 2007-03 | Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy | Jung, S. I.; Yeo, H. Y.; Yun, I.; Han, I. K.; Cho, S. M.; Lee, J. I. |
| 2007-10 | Near-field scanning optical microscopy of quantum dot broad area laser diodes | Jung, S. I.; Yeo, H. Y.; Yun, I.; Leem, J. Y.; Han, I. K.; Kim, J. S.; Lee, J. I. |
| 2006-05 | Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources | Song, J. D.; Choi, W. J.; Lee, J. I.; Kim, J. M.; Chang, K. S.; Lee, Y. T. |
| 2006-06 | Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots | Jung, S. I.; Yeo, H. Y.; Yun, I.; Leem, J. Y.; Han, I. K.; Kim, J. S.; Lee, J. I. |
| 2008 | QD technology and market prospects in the sectors of space exploration, biomedicine, defense, and security | Charitidis, C. A.; Golnas, A.; Chouliaras, F.; Arpatzanis, N.; Dimitriadis, C. A.; Lee, J. I.; Bakolias, C. |
| 2011-08 | Quantum dot-like effect in InGaAs/GaAs quantum well | Abdellatif, M. H.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I. |
| 2009-04 | Rapid thermal annealing temperature dependence of noise properties in Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In0.2Ga0.8As wells | Arpatzanis, N.; Hastas, N. A.; Dimitriadis, C. A.; Konstantinidis, G.; Charitidis, C.; Song, J. D.; Choi, W. J.; Lee, J. I. |
| 2012-02 | Self-Assembled Growth of GaAs Anti Quantum Dots in InAs Matrix by Migration Enhanced Molecular Beam Epitaxy | Lee, E. H.; Song, J. D.; Kim, S. Y.; Han, I. K.; Chang, S. K.; Lee, J. I. |
| 2007-10 | Size distribution effects on self-assembled InAs quantum dots | Jung, S. I.; Yeo, H. Y.; Yun, I.; Leem, J. Y.; Han, I. K.; Kim, J. S.; Lee, J. I. |
| 2006-11 | Study on the energy-band structure of an InAs/InGaAs/GaAs quantum-dot infrared photodetector structure | Kim, J. S.; Kim, E. K.; Song, J. D.; Choi, W. J.; Lee, J. I. |
| 2007-03 | The optical characteristics of epitaxial lateral and vertical overgrowth of GaN on stripe-patterned Si substrate | Yeo, H. Y.; Jung, S. I.; Yun, I.; Lee, J. I.; Han, I. K.; Cho, S. M. |
