| 2012-02-07 | All-Organic Photopatterned One Diode-One Resistor Cell Array for Advanced Organic Nonvolatile Memory Applications | Kim, Tae-Wook; Zeigler, David F.; Acton, Orb; Yip, Hin-Lap; Ma, Hong; Jen, Alex K. -Y. |
| 2022-04 | An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode | Kuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; Baek, Seung-Hyub; Han, Jae-Hoon; Kim, Sang-Hyeon |
| 2005-03-22 | Asymmetrical increase of memory window in MFIS devices after avalanche electron injection | Lee, KJ; Roh, Y; Kim, IS; Kim, YT |
| - | Biopolar Resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices | Yang Min Kyu; Choi Sun Young; Lee, Jeon Kook |
| - | Bipolar resistive switching behavior in Ti/MnO2/Pt structure of nonvolatile Memory Devices | Yang Min Kyu; Lee, Jeon Kook; 고태국 |
| 2007-09 | Characteristics of nano-floating-gate memory with Au nanoparticles in SiO2 dielectrics | Lee, Min Seung; Lee, Dong Uk; Kim, Jae-Hoon; Kim, Eun Kyu; Kim, Won Mok; Cho, Won-Ju |
| 2024-01 | Defect-Engineered Semiconducting van der Waals Thin Film at Metal-Semiconductor Interface of Field-Effect Transistors | Kim, Jihyun; Rhee, Dongjoon; Jung, Myeongjin; Cheon, Gang Jin; Kim, Kangsan; Kim, Jae Hyung; Park, Ji Yun; Yoon, Jiyong; Lim, Dong Un; Cho, Jeong Ho; Kim, In Soo; Son, Donghee; Jariwala, Deep; Kang, Joohoon |
| 2008-08 | Electrode dependence of bipolar resistive switching in SrZrO3 : Cr perovskite film-based memory devices | Park, Jae-Wan; Yang, Min Kyu; Lee, Jeon-Kook |
| - | Electrode dependent resistive switching of Cr doped SrZrO3 thin films for nonvolatile memory devices | Lee, Jeon Kook; Jae-Wan Park; Yang Min Kyu |
| 2007-02-26 | Floating gated silicon-on-insulator nonvolatile memory devices with Au nanoparticles embedded in SiO1.3N insulators by digital sputtering method | Lee, Dong Uk; Lee, Min Seung; Kim, Jae-Hoon; Kim, Eun Kyu; Koo, Hyun-Mo; Cho, Won-Ju; Kim, Won Mok |
| 2014-05-14 | High Crystalline Dithienosilole-Cored Small Molecule Semiconductor for Ambipolar Transistor and Nonvolatile Memory | Kang, Woonggi; Jung, Minwoo; Cha, Wonsuk; Jang, Sukjae; Yoon, Youngwoon; Kim, Hyunjung; Son, Hae Jung; Lee, Doh-Kwon; Kim, BongSoo; Cho, Jeong Ho |
| 2015-09 | Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory | Yang, Yiming; Peng, Xingyue; Kim, Hong-Seok; Kim, Taeho; Jeon, Sanghun; Kang, Hang Kyu; Choi, Wonjun; Song, Jindong; Doh, Yong-Joo; Yu, Dong |
| 2023-10 | Indium-Gallium-Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine | Park, Eunpyo; Jang, Suyeon; Noh, Gichang; Jo, Yooyeon; Lee, Dae Kyu; Kim, In Soo; Song, Hyun-Cheol; Kim, Sangbum; Kwak, Joon Young |
| 2005-09 | Kinetic Characteristics of FCC to Hexagonal Transformation in (Ge1Sb2Te4)(0.8)(Sn1Bi2Te4)(0.2) Chalcogenide Alloy for Phase Change Memory | Ahn, Dong-Ho; Kim, Hyun-Mi; Lee, Min-Hyun; Kang, Dae-Hwan; Cheong, Byung-ki; Kim, Ki-Bum |
| 2018-06 | Low-Temperature-Processed SiOx One Diode-One Resistor Crossbar Array and Its Flexible Memory Application | Yoon, Jongwon; Ji, Yongsung; Lee, Seoung-Ki; Hyon, Jinho; Tour, James M. |
| 2010-10 | Nanofloating Gate Memory Devices Based on Controlled Metallic Nanoparticle-Embedded InGaZnO TFTs | Park, Young-Su; Lee, Sang Yeol; Lee, Jang-Sik |
| 2016-08 | Nonvolatile Charge Injection Memory Based on Black Phosphorous 2D Nanosheets for Charge Trapping and Active Channel Layers | Lee, Young Tack; Lee, Junyeong; Ju, Hyunsu; Lim, Jung Ah; Yi, Yeonjin; Choi, Won Kook; Hwang, Do Kyung; Im, Seongil |
| 2008-02-06 | Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer | Son, Dong-Ick; Kim, Ji-Hwan; Park, Dong-Hee; Choi, Won Kook; Li, Fushan; Ham, Jung Hun; Kim, Tae Whan |
| 2017-05 | Nonvolatile Memory and Optoelectronic Devices with 2-dimensional Black Phosphorous Semiconductor | 최원국 |
| - | Resistive switching of oxide semiconducting thin films for nonvolatile memory devices | Yang Min Kyu; 고태국; Lee, Jeon Kook |
| - | Resistive switching using a hetero junction structure consisting of transition metal oxide | Yang Min Kyu; Tae Kuk Ko; Lee, Jeon Kook |
