| 2003-06 | High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels | Choi, CS; Kang, HS; Choi, WY; Kim, HJ; Choi, WJ; Kim, DH; Jang, KC; Seo, KS |
| 2003-05-29 | High power broadband InGaAs/GaAs quantum dot superluminescent diodes | Heo, DC; Song, JD; Choi, WJ; Lee, JI; Jung, JC; Han, IK |
| 2003 | Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO2 and SiNx capping films | Lee, JH; Choi, WJ; Park, YJ; Han, IK; Lee, JI; Cho, WJ; Kim, EK |
| 2006-04-01 | InAs/GaAs quantum dot lasers with dots in an asymmetric InxGa1-xAs quantum well structure | Choi, WJ; Song, JD; Lee, JI; Kim, KC; Kim, TG |
| 2004-10-15 | Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy | Song, JD; Park, YM; Shin, JC; Lim, JG; Park, YJ; Choi, WJ; Han, IK; Lee, JI; Kim, HS; Park, CG |
| 2004-07 | Investigation of detection wavelength in quantum dot infrared photodetector | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H; Kim, EK |
| 2005-06 | Linearization of a multiple quantum well electro-absorption modulator by using quantum well intermixing | Choi, WJ; Yi, JC |
| 2001 | Linearization of quantum well electro-absorption modulator by quantum well intermixing technique for analog optical links | Choi, WJ; Han, IK; Park, YJ; Kim, EK; Lee, JI; Kim, WS; Yi, JC |
| 2005-02 | Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy | Choi, WJ; Song, JD; Hwang, SH; Lee, JI; Kim, JH; Song, JI; Kim, EK; Chovet, A |
| 2004-10-01 | MBE growth and optical properties of digital-alloy 1.55 mu m multi-quantum wells | Song, JD; Choi, WJ; Kim, JM; Chang, KS; Lee, YT |
| 1995-01 | Microwave characteristics of GaAs MESFET with optical illumination | Kim, HJ; Kim, SJ; Kim, DM; Chung, H; Woo, DH; Kim, SI; Choi, WJ; Han, IK; Kim, SH; Lee, JL; Kang, KN; Cho, K |
| 2005 | Optical and electrical characterization of quantum dot infrared photodetector structure treated with hydrogen-plasma | Nam, HD; Song, JD; Choi, WJ; Lee, JI; Yang, HS |
| 1998-08 | Optical characterization of GaAs/AlAs short period superlattices | Woo, DH; Han, IK; Choi, WJ; Lee, S; Kim, HJ; Lee, JI; Kim, SH; Kang, KN; Choi, SG; Kim, YD; Yoo, SD; Aspnes, DE; Rhee, SJ; Woo, JC |
| 2004-06-15 | Optical properties of silicon nanoparticles by ultrasound-induced solution method | Lee, S; Cho, WJ; Chin, CS; Han, IK; Choi, WJ; Park, YJ; Song, JD; Lee, JI |
| 2004-07 | Optical studies of self-assembled InGaAs/GaAs quantum dot structures drown by atomic layer epitaxy | Rho, H; Song, JD; Park, YJ; Choi, WJ; Lee, JI |
| 2002 | P-channel MODFET as an optoelectronic detector | Kim, HJ; Kim, DM; Han, IK; Choi, WJ; Zimmermann, J; Lee, J |
| 2004-07 | Photoluminescence and electromodulation study of InAs/GaAs quantum dots | Kim, SS; Cheong, H; Song, JD; Park, YM; Shin, JC; Park, YJ; Choi, WJ; Lee, JI |
| 2005-03 | Photovoltaic In0.5Ga0.5As/GaAs quantum dot infrared photodetector with a single-sided Al0.3Ga0.7As layer | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H; Lee, SW |
| 2006-02 | Polarized optical properties of a GaInP lateral superlattice | Min, KI; Lim, JR; Kim, JS; Rho, H; Hahn, JR; Song, JD; Choi, WJ; Kim, JM; Lee, YT |
| 2005-02 | Raman scattering from InGaAs/GaAs quantum dot structures grown by atomic layer molecular beam epitaxy | Choi, WJ; Rho, H; Song, JD; Lee, JI; Cho, YH |
| 2001 | Role of inserting layer controlling wavelength in InGaAs quantum dots | Park, SK; Park, YJ; Kim, HJ; Lee, JH; Park, YM; Kim, EK; Choi, WJ; Han, IK; Lee, C |
| 2003-02 | Simple model for 1/f noise in polycrystalline silicon thin-film transistors | Han, I; Choi, WJ; Kim, HJ; Park, YJ; Cho, WJ; Lee, JI; Chovet, A; Brini, J |
| 2004-12 | Spatially-resolved optical studies on intermixing of InGaAs quantum-dot laser structures by using an AlAs native oxide and thermal annealing | Kwon, BJ; Hwang, JS; Cho, YH; Cho, NK; Jeon, HS; Song, JD; Choi, WJ; Lee, JI; Rho, H |
| 2003-02 | Spectral response change in a quantum well infrared photodetector by using quantum well intermixing | Shin, JC; Choi, WJ; Han, IK; Park, YJ; Lee, JI; Kim, HJ; Choi, JW; Kim, EK |
| 2006-05 | Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communication | Song, JD; Choi, WJ; Lee, JI; Lee, JY |
| 2005-11-15 | Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy | Kim, HS; Suh, JH; Park, CG; Lee, SJ; Noh, SK; Song, JD; Park, YJ; Choi, WJ; Lee, JI |
| 2004-07-05 | Study of optical heterodyne mixing characteristics in an A1lnAs/GalnAs transferred-substrate double heterojunction bipolar transistor | Kwak, NM; Kim, HJ; Kim, HT; Choi, WJ; Cho, K |
| 2002 | Study on the light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer | Han, IK; Heo, DC; Choi, WJ; Lee, JI |
| 2003-10 | Synthesis and biological evaluation of halo-neplanocin A as novel mechanism-based inhibitors of S-Adenosylhomocysteine hydrolase | Jeong, LS; Moon, HR; Park, JC; Shin, DH; Choi, WJ; Lee, KM; Kim, HO; Chun, MW; Kim, HD; Kim, JH |
| 2003-02 | Thermal treatment of InGaAs/GaAs self-assembled quantum dots with SiNx and SiO2 capping layers | Lee, JH; Choi, WJ; Park, YJ; Han, IK; Lee, JI; Cho, WJ; E. K. Kim; C. M. Lee; H.-W. Kim |
