Showing results 20 to 49 of 105
Issue Date | Title | Author(s) |
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2020-03-24 | Cation-Regulated Transformation for Continuous Two-Dimensional Tin Monosulfide | Baek, In-Hwan; Pyeon, Jung Joon; Lee, Ga-Yeon; Song, Young Geun; Lee, Hansol; Won, Sung Ok; Han, Jeong Hwan; Kang, Chong-Yun; Chung, Taek-Mo; Hwang, Cheol Seong; Kim, Seong Keun |
2016-09 | Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours | Lim, Hyungkwang; Soni, Rohit; Kim, Dohun; Kim, Guhyun; Kornijcuk, Vladimir; Kim, Inho; Park, Jong-Keuk; Hwang, Cheol Seong; Jeong, Doo Seok |
2014-02-15 | Chemical structures and electrical properties of atomic layer deposited HfO2 thin films grown at an extremely low temperature (<= 100 degrees C) using O-3 as an oxygen source | Kim, Jeong Hwan; Park, Tae Joo; Kim, Seong Keun; Cho, Deok-Yong; Jung, Hyung-Suk; Lee, Sang Young; Hwang, Cheol Seong |
2014-12 | Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films | Jeon, Woojin; Lee, Woongkyu; Yoo, Yeon Woo; An, Cheol Hyun; Han, Jeong Hwan; Kim, Seong Keun; Hwang, Cheol Seong |
2021-05-06 | Comparison of high-k Y2O3/TiO2 bilayer and Y-doped TiO2 thin films on Ge substrate | Kim, Dong Gun; Kim, Hae-Ryoung; Kwon, Dae Seon; Lim, Junil; Seo, Haengha; Kim, Tae Kyun; Paik, Heewon; Lee, Woongkyu; Hwang, Cheol Seong |
2023-09 | Comprehensive interpretations of thermodynamic and kinetic effects on the phase fractions in Hf1-xZrxO2 by first principle calculations | Ye, Kun Hee; Yeu, In Won; Han, Gyuseung; Jeong, Taeyoung; Yoon, Seungjae; Kim, Dohyun; Hwang, Cheol Seong; Choi, Jung-Hae |
2013-02-25 | Control of conducting filaments in TiO2 films by a thin interfacial conducting oxide layer at the cathode | Kim, Seong Keun; Choi, Byung Joon; Yoon, Kyung Jean; Yoo, Yeon Woo; Hwang, Cheol Seong |
2014-05-28 | Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films | Jeon, Woojin; Rha, Sang Ho; Lee, Woongkyu; Yoo, Yeon Woo; An, Cheol Hyun; Jung, Kwang Hwan; Kim, Seong Keun; Hwang, Cheol Seong |
2016-11 | Correct Extraction of Frequency Dispersion in Accumulation Capacitance in InGaAs Metal-Insulator-Semiconductor Devices | Lee, Woo Chul; Cho, Cheol Jin; Choi, Jung-Hae; Song, Jin Dong; Hwang, Cheol Seong; Kim, Seong Keun |
2022-03 | Cross-linked structure of self-aligned p-type SnS nanoplates for highly sensitive NO2 detection at room temperature | Song, Young Geun; Baek, In-Hwan; Yim, Jae-Gyun; Eom, Taeyong; Chung, Taek-Mo; Lee, Chul-Ho; Hwang, Cheol Seong; Kang, Chong-Yun; Kim, Seong Keun |
2011-03 | Dc current transport behavior in amorphous GeSe films | Jeong, Doo Seok; Park, Goon-Ho; Lim, Hyungkwang; Hwang, Cheol Seong; Lee, Suyoun; Cheong, Byung-ki |
2013-10-28 | Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor | Rha, Sang Ho; Kim, Un Ki; Jung, Jisim; Hwang, Eun Suk; Choi, Jung-Hae; Hwang, Cheol Seong |
2021-01 | Effect of local strain energy to predict accurate phase diagram of III-V pseudobinary systems: case of Ga(As,Sb) and (In,Ga)As | Han, Gyuseung; Yeu, In Won; Park, Jaehong; Ye, Kun Hee; Lee, Seung-Cheol; Hwang, Cheol Seong; Choi, Jung-Hae |
2014-10-21 | Effect of oxygen vacancy on the structural and electronic characteristics of crystalline Zn2SnO4 | Lee, Joohwi; Kang, Youngho; Hwang, Cheol Seong; Han, Seungwu; Lee, Seung-Cheol; Choi, Jung-Hae |
2011-08-01 | Effects of magnitude and direction of the biaxial compressive strain on the formation and migration of a vacancy in Ge by using density functional theory | Lee, Joohwi; Na, Kwang Duk; Lee, Seung-Cheol; Hwang, Cheol Seong; Choi, Jung-Hae |
2013-07 | Elastic resistance change and action potential generation of non-faradaic Pt/TiO2/Pt capacitors | Lim, Hyungkwang; Jang, Ho Won; Lee, Doh-Kwon; Kim, Inho; Hwang, Cheol Seong; Jeong, Doo Seok |
2012-07 | Emerging memories: resistive switching mechanisms and current status | Jeong, Doo Seok; Thomas, Reji; Katiyar, R. S.; Scott, J. F.; Kohlstedt, H.; Petraru, A.; Hwang, Cheol Seong |
2018-08 | Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition | Lee, Woo Chul; Cho, Cheol Jin; Park, Suk-In; Jun, Dong-Hwan; Song, Jin Dong; Hwang, Cheol Seong; Kim, Seong Keun |
2021-09 | Enhancement of electrical performance of atomic layer deposited SnO films via substrate surface engineering | Baek, In-Hwan; Cho, Ah-Jin; Lee, Ga Yeon; Choi, Heenang; Won, Sung Ok; Eom, Taeyong; Chung, Taek-Mo; Hwang, Cheol Seong; Kim, Seong Keun |
2023-08 | Enhancing the Crystallization and Properties of the SrRuO3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO2 through Al Substitution | Lim, Junil; Ye, Kun Hee; Kwon, Dae Seon; Seo, Haengha; Kim, Tae Kyun; Paik, Heewon; Shin, Jong Hoon; Song, Haewon; Jang, Yoon Ho; Kang, Sukin; Choi, Jung-Hae; Hwang, Cheol Seong |
2019-02-04 | Equilibrium crystal shape of GaAs and InAs considering surface vibration and new (111)B reconstruction: ab-initio thermodynamics | Yeu, In Won; Han, Gyuseung; Park, Jaehong; Hwang, Cheol Seong; Choi, Jung-Hae |
2014-12-20 | Evaluating the Top Electrode Material for Achieving an Equivalent Oxide Thickness Smaller than 0.4 nm from an Al-Doped TiO2 Film | Jeon, Woojin; Yoo, Sijung; Kim, Hyo Kyeom; Lee, Woongkyu; An, Cheol Hyun; Chung, Min Jung; Cho, Cheol Jin; Kim, Seong Keun; Hwang, Cheol Seong |
2009-05 | Fabrication of Gd2O3-Doped CeO2 Thin Films for Single-Chamber-Type Solid Oxide Fuel Cells and Their Characterization | Choi, Sun Hee; Hwang, Cheol Seong; Lee, Hae-Weon; Kim, Joosun |
2019-10-17 | Ferroelectric switching in bilayer 3R MoS(2 )via interlayer shear mode driven by nonlinear phononics | Park, Jaehong; Yeu, In Won; Han, Gyuseung; Hwang, Cheol Seong; Choi, Jung-Hae |
2006-05 | First-principles study of point defects in rutile TiO2-x | Cho, Eunae; Han, Seungwu; Ahn, Hyo-Shin; Lee, Kwang-Ryeol; Kim, Seong Keun; Hwang, Cheol Seong |
2010-09-01 | First-principles study on the formation of a vacancy in Ge under biaxial compressive strain | Choi, Jung-Hae; Na, Kwang-Duk; Lee, Seung-Cheol; Hwang, Cheol Seong |
2017-10-25 | Four-Bits-Per-Cell Operation in an HfO2-Based Resistive Switching Device | Kim, Gun Hwan; Ju, Hyunsu; Yang, Min Kyu; Lee, Dong Kyu; Choi, Ji Woon; Jang, Jae Hyuck; Lee, Sang Gil; Cha, Ik Su; Park, Bo Keun; Han, Jeong Hwan; Chung, Taek-Mo; Kim, Kyung Min; Hwang, Cheol Seong; Lee, Young Kuk |
2016-01-08 | Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure | Kim, Yu Jin; Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Jeon, Woojin; Moon, Taehwan; Do Kim, Keum; Jeong, Doo Seok; Yamada, Hiroyuki; Hwang, Cheol Seong |
2017-08-17 | Growth and Characterization of BeO Thin Films Grown by Atomic Layer Deposition Using H2O and O-3 as Oxygen Sources | Lee, Woo Chul; Cho, Cheol Jin; Kim, Sangtae; Larsen, Eric S.; Yum, Jung Hwan; Bielawski, Christopher W.; Hwang, Cheol Seong; Kim, Seong Keun |
2016-01 | High quality interfacial sulfur passivation via H2S pre-deposition annealing for an atomic-layer-deposited HfO2 film on a Ge substrate | Seok, Tae Jun; Cho, Young Jin; Jin, Hyun Soo; Kim, Dae Hyun; Kim, Dae Woong; Lee, Sang-Moon; Park, Jong-Bong; Won, Jung-Yeon; Kim, Seong Keun; Hwang, Cheol Seong; Park, Tae Joo |