Showing results 30 to 59 of 105
Issue Date | Title | Author(s) |
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2011-03 | Dc current transport behavior in amorphous GeSe films | Jeong, Doo Seok; Park, Goon-Ho; Lim, Hyungkwang; Hwang, Cheol Seong; Lee, Suyoun; Cheong, Byung-ki |
2013-10-28 | Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor | Rha, Sang Ho; Kim, Un Ki; Jung, Jisim; Hwang, Eun Suk; Choi, Jung-Hae; Hwang, Cheol Seong |
2021-01 | Effect of local strain energy to predict accurate phase diagram of III-V pseudobinary systems: case of Ga(As,Sb) and (In,Ga)As | Han, Gyuseung; Yeu, In Won; Park, Jaehong; Ye, Kun Hee; Lee, Seung-Cheol; Hwang, Cheol Seong; Choi, Jung-Hae |
2014-10-21 | Effect of oxygen vacancy on the structural and electronic characteristics of crystalline Zn2SnO4 | Lee, Joohwi; Kang, Youngho; Hwang, Cheol Seong; Han, Seungwu; Lee, Seung-Cheol; Choi, Jung-Hae |
2011-08-01 | Effects of magnitude and direction of the biaxial compressive strain on the formation and migration of a vacancy in Ge by using density functional theory | Lee, Joohwi; Na, Kwang Duk; Lee, Seung-Cheol; Hwang, Cheol Seong; Choi, Jung-Hae |
2013-07 | Elastic resistance change and action potential generation of non-faradaic Pt/TiO2/Pt capacitors | Lim, Hyungkwang; Jang, Ho Won; Lee, Doh-Kwon; Kim, Inho; Hwang, Cheol Seong; Jeong, Doo Seok |
2012-07 | Emerging memories: resistive switching mechanisms and current status | Jeong, Doo Seok; Thomas, Reji; Katiyar, R. S.; Scott, J. F.; Kohlstedt, H.; Petraru, A.; Hwang, Cheol Seong |
2018-08 | Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition | Lee, Woo Chul; Cho, Cheol Jin; Park, Suk-In; Jun, Dong-Hwan; Song, Jin Dong; Hwang, Cheol Seong; Kim, Seong Keun |
2021-09 | Enhancement of electrical performance of atomic layer deposited SnO films via substrate surface engineering | Baek, In-Hwan; Cho, Ah-Jin; Lee, Ga Yeon; Choi, Heenang; Won, Sung Ok; Eom, Taeyong; Chung, Taek-Mo; Hwang, Cheol Seong; Kim, Seong Keun |
2023-08 | Enhancing the Crystallization and Properties of the SrRuO3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO2 through Al Substitution | Lim, Junil; Ye, Kun Hee; Kwon, Dae Seon; Seo, Haengha; Kim, Tae Kyun; Paik, Heewon; Shin, Jong Hoon; Song, Haewon; Jang, Yoon Ho; Kang, Sukin; Choi, Jung-Hae; Hwang, Cheol Seong |
2019-02-04 | Equilibrium crystal shape of GaAs and InAs considering surface vibration and new (111)B reconstruction: ab-initio thermodynamics | Yeu, In Won; Han, Gyuseung; Park, Jaehong; Hwang, Cheol Seong; Choi, Jung-Hae |
2014-12-20 | Evaluating the Top Electrode Material for Achieving an Equivalent Oxide Thickness Smaller than 0.4 nm from an Al-Doped TiO2 Film | Jeon, Woojin; Yoo, Sijung; Kim, Hyo Kyeom; Lee, Woongkyu; An, Cheol Hyun; Chung, Min Jung; Cho, Cheol Jin; Kim, Seong Keun; Hwang, Cheol Seong |
2009-05 | Fabrication of Gd2O3-Doped CeO2 Thin Films for Single-Chamber-Type Solid Oxide Fuel Cells and Their Characterization | Choi, Sun Hee; Hwang, Cheol Seong; Lee, Hae-Weon; Kim, Joosun |
2019-10-17 | Ferroelectric switching in bilayer 3R MoS(2 )via interlayer shear mode driven by nonlinear phononics | Park, Jaehong; Yeu, In Won; Han, Gyuseung; Hwang, Cheol Seong; Choi, Jung-Hae |
2006-05 | First-principles study of point defects in rutile TiO2-x | Cho, Eunae; Han, Seungwu; Ahn, Hyo-Shin; Lee, Kwang-Ryeol; Kim, Seong Keun; Hwang, Cheol Seong |
2010-09-01 | First-principles study on the formation of a vacancy in Ge under biaxial compressive strain | Choi, Jung-Hae; Na, Kwang-Duk; Lee, Seung-Cheol; Hwang, Cheol Seong |
2017-10-25 | Four-Bits-Per-Cell Operation in an HfO2-Based Resistive Switching Device | Kim, Gun Hwan; Ju, Hyunsu; Yang, Min Kyu; Lee, Dong Kyu; Choi, Ji Woon; Jang, Jae Hyuck; Lee, Sang Gil; Cha, Ik Su; Park, Bo Keun; Han, Jeong Hwan; Chung, Taek-Mo; Kim, Kyung Min; Hwang, Cheol Seong; Lee, Young Kuk |
2016-01-08 | Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure | Kim, Yu Jin; Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Jeon, Woojin; Moon, Taehwan; Do Kim, Keum; Jeong, Doo Seok; Yamada, Hiroyuki; Hwang, Cheol Seong |
2017-08-17 | Growth and Characterization of BeO Thin Films Grown by Atomic Layer Deposition Using H2O and O-3 as Oxygen Sources | Lee, Woo Chul; Cho, Cheol Jin; Kim, Sangtae; Larsen, Eric S.; Yum, Jung Hwan; Bielawski, Christopher W.; Hwang, Cheol Seong; Kim, Seong Keun |
2016-01 | High quality interfacial sulfur passivation via H2S pre-deposition annealing for an atomic-layer-deposited HfO2 film on a Ge substrate | Seok, Tae Jun; Cho, Young Jin; Jin, Hyun Soo; Kim, Dae Hyun; Kim, Dae Woong; Lee, Sang-Moon; Park, Jong-Bong; Won, Jung-Yeon; Kim, Seong Keun; Hwang, Cheol Seong; Park, Tae Joo |
2019-04-24 | High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition | Baek, In-Hwan; Pyeon, Jung Joon; Han, Seong Ho; Lee, Ga-Yeon; Choi, Byung Joon; Han, Jeong Hwan; Chung, Taek-Mo; Hwang, Cheol Seong; Kim, Seong Keun |
2020-09-14 | Highly sensitive flexible NO(2)sensor composed of vertically aligned 2D SnS(2)operating at room temperature | Pyeon, Jung Joon; Baek, In-Hwan; Song, Young Geun; Kim, Gwang Su; Cho, Ah-Jin; Lee, Ga-Yeon; Han, Jeong Hwan; Chung, Taek-Mo; Hwang, Cheol Seong; Kang, Chong-Yun; Kim, Seong Keun |
2015-12-01 | Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing | Jin, Hyun Soo; Cho, Young Jin; Seok, Tae Jun; Kim, Dae Hyun; Kim, Dae Woong; Lee, Sang-Moon; Park, Jong-Bong; Yun, Dong-Jin; Kim, Seong Keun; Hwang, Cheol Seong; Park, Tae Joo |
2010-07-01 | Improved properties of Pt-HfO2 gate insulator-ZnO semiconductor thin film structure by annealing of ZnO layer | Na, Kwang Duk; Kim, Jeong Hwan; Park, Tae Joo; Song, Jaewon; Hwang, Cheol Seong; Choi, Jung-Hae |
2023-08 | Improving the Properties of SrRuO3 Electrode Films Grown by Atomic Layer-Deposited SrO and Pulsed Chemical Vapor-Deposited RuO2 Using Al2O3 Capping Layers | Lim, Junil; Kwon, Dae Seon; Seo, Haengha; Kim, Tae Kyun; Paik, Heewon; Shin, Jonghoon; Song, Haewon; Jang, Yoon Ho; Park, Yu-kyung; Lee, Keonuk; Kim, Young Sin; Choi, Jung-Hae; Hwang, Cheol Seong |
2006-05-01 | Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors | Park, Jaehoo; Park, Tae Joo; Cho, Moonju; Kim, Seong Keun; Hong, Sug Hun; Kim, Jeong Hwan; Seo, Minha; Hwang, Cheol Seong; Won, Jeong Yeon; Jeong, Ranju; Choi, Jung-Hae |
2013-12 | Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials | Lee, Sang Woon; Choi, Byung Joon; Eom, Taeyong; Han, Jeong Hwan; Kim, Seong Keun; Song, Seul Ji; Lee, Woongkyu; Hwang, Cheol Seong |
2020-02 | Initial oxidation and surface stability diagram of Ge(100) as a function of the temperature and oxygen partial pressure through ab initio thermodynamics | Liu, Kai; Yeu, In Won; Hwang, Cheol Seong; Choi, Jung-Hae |
2017-03-14 | Interface Engineering for Extremely Large Grains in Explosively Crystallized TiO2 Films Grown by Low-Temperature Atomic Layer Deposition | Cho, Cheol Jin; Kang, Jun-Yun; Lee, Woo Chul; Baek, Seung-Hyub; Kim, Jin-Sang; Hwang, Cheol Seong; Kim, Seong Keun |
2021-11 | InterPhon: Ab initio interface phonon calculations within a 3D electronic structure framework* | Yeu, In Won; Han, Gyuseung; Ye, Kun Hee; Hwang, Cheol Seong; Choi, Jung-Hae |