Showing results 5 to 34 of 68
Issue Date | Title | Author(s) |
---|---|---|
- | Detection of Rashba field using a rotational applied field | Jang Hyuncheol; Park Youn Ho; Koo, Hyun Cheol; Kim Hyung-jun; Chang, Joonyeon; Kim, Hi Jung |
- | Determination of spin-orbit interaction in InAs heterostructure | Lee, Tae-young; Chang, Joonyeon; 김경호; Kim Hyung-jun; Koo, Hyun Cheol; Han, Suk Hee |
- | Determination of spin-orbit interacton parameter in InAs-inserted heterostructure | Lee, Tae-young; Chang, Joonyeon; 김경호; Kim Hyung-jun; Koo, Hyun Cheol; Han, Suk Hee |
2007-12 | Directed arrangement of Ge quantum dots on Si mesas by selective epitaxial growth | Kim Hyung-jun; Kang Wang |
- | Electric-field-induced spin injection enhancement at a ferromagnet-semiconductor interface | Koo, Hyun Cheol; Park Youn-Ho; 김경호; Kim Hyung-jun; Chang, Joonyeon; Han, Suk Hee |
- | Electrical Field Control of Spin-orbit Interaction in Modulation-doped InAs Quantum Well Structure | 김경호; Kim Hyung-jun; Koo, Hyun Cheol; Han, Suk Hee |
- | Electrical observation of the spin Hall effects in InAs-inserted heterostructure | Lee, Tae-young; Chang, Joonyeon; Koo, Hyun Cheol; Kim Hyung-jun; Han, Suk Hee |
- | Electrical spin injection and detection in a GaAs(110) channel | KIM HANSUNG; Park, hee-gyum; Kim Seong Kwang; Hyeong rak Lim; Koo, Hyun Cheol; Kim Hyung-jun |
- | Electrical spin injection and detection into In53Ga47As and InAs quantum well structure | Park Youn-Ho; Lee, Tae-young; 김경호; Kim Hyung-jun; Koo, Hyun Cheol; Chang, Joonyeon; Han, Suk Hee |
- | Enhancement of gate controlled spin-orbit interaction via potential asymmetry of InAs quantum well | 김경호; Kim Hyung-jun; Koo, Hyun Cheol; Chang, Joonyeon; Han, Suk Hee |
2006-12 | Epitaxial Growth of Semiconductor Self-Assembled Quantum Dots | Kim Hyung-jun; Zuo Ming Zhao; Bin Shi; J Lin; Ya-Hong Xie |
- | Epitaxial growth of strained germanium using InxAl1-xAs buffer layer | KIM HANSUNG; Shim Jae-Phil; Ju, Gunwu; LIM HEEJEONG; kim seong kwang; Sanghyeon Kim; Kim Hyung-jun |
- | Epitaxial growths of Fe and MgO layers on GaAs (001): Microstructure and magnetic property | Kim Kyung-Ho; Kim Hyung-jun; Ahn, Jae Pyoung; Seung-Cheol Lee; Won, Sung Ok; Jun Woo Choi; Chang, Joonyeon; Kim Young Keun |
- | Epitaxial Relationship for the Fe/MgO/InxGa1-xAs Heterostructure | 김경호; Kim Hyung-jun; shin il jae; Han, Suk Hee |
- | Epitaxial Relationship of Fe/MgO on InxGa1-xAs Substrates | Kim Kyung Ho; Kim Hyung-jun; shin il jae; HAN, JUN HYUN; Han, Suk Hee |
- | Fabrication of Ultra-low Dit(E) InGaAs MOSFETs | Kim Seong Kwang; Shim Jae Phil; Geum Daemyeong; Chang Zoo Kim; KIM HANSUNG; SONG, JIN-DONG; Sung-Jin Choi; Dae Hwan Kim; Choi, Won Jun; Kim Hyung-jun; Dong Myong Kim; Sanghyeon Kim |
- | Gate controlled spin-orbit coupling in InAs-inserted quantum well structure | Kim Kyung-Ho; Park Youn Ho; Koo, Hyun Cheol; Chang, Joonyeon; Kim Hyung-jun; Kim Young Keun |
- | Gate controlled spin-orbit coupling in the InAs quantum well structure | Kim Kyung-ho; Kim Hyung-jun; Oh Jungwoo |
- | Gate-Control of Spin-Orbit Coupling in InAs HEMT Structures on Si Substrates | Kim Hyung-jun |
- | Gate-controlled Spin-orbit Interaction in a Double-sided doped InAs Quantum well structure | Kim Kyung Ho; Kim Hyung-jun; Koo, Hyun Cheol; Chang, Joonyeon; Han, Suk Hee; 김영근 |
- | Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates | Shin Jaekyun; Kim Kyung-Ho; Doo-Seung Um; Hochan Lee; Seongdong Lim; Chang, Joonyeon; Koo, Hyun Cheol; Min-Wook Oh; Hyunhyub Ko; Kim Hyung-jun |
- | Growth temperature and thickness dependent magnetic anisotropy in L10 ordered FePd thin films with perpendicular magnetic anisotropy | Kim Hyeon Seung; Jun Woo Choi; Kim Hyung-jun; Min, Byoung Chul; Lim, Sang-Ho |
- | Growth temperature dependent Ge epitaxy on GaAs(100) substrate | LIM HEEJEONG; Shim Jae-Phil; Ju, Gunwu; KIM HANSUNG; kim seong kwang; Sanghyeon Kim; Kim Hyung-jun |
- | High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n- doping on InSb/GaAs | SONG, JIN-DONG; Kim Hyung-jun; Shin Sang Hoon; Su youn, Kim |
- | High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n-doping on InSb/GaAs | Shin Sang Hoon; SONG, JIN-DONG; Su youn, Kim; Kim Hyung-jun; Chang, Joonyeon; Han, Suk Hee |
- | Impact of Ground Plane Doping on InGaAs-OI MOSFETs | Kim Seong Kwang; Shim Jae Phil; Geum Daemyeong; 김재원; 김창주; KIM HANSUNG; SONG, JIN-DONG; 최성진; 김대환; Choi, Won Jun; Kim Hyung-jun; 김동명; Sanghyeon Kim |
- | Improvement on interfacial quality of Ge MOS Capacitor using RIE O2 plasma treatment | Hyeong rak Lim; Kim Seong Kwang; Jae-Hoon Han; Shim Jae Phil; Subin Lee; Kim Hyung-jun; Byeong-Kwon Ju; Sanghyeon Kim |
- | In-Plane Magnetic Anisotropy Dependence of MgO Growth temperature in Fe/MgO on InAs(001) Substrates | 김경호; Kim Hyung-jun; shin il jae; Han, Suk Hee |
- | InAs 2DEG HEMT on GaAs and InP with Sb- and P- cluster MBE for SPIN-FET and InSb on GaAs for magnetic sensor | SONG, JIN-DONG; Kim Hyung-jun; Lim Ju-Young; Shin Sang Hoon; 김경호; Chang, Joonyeon |
- | InAs 2DEG HEMT on GaAs and InP with Sb- and P- cluster MBE for SPIN-FET and InSb on GaAs for magnetic sensor | SONG, JIN-DONG; Kim Hyung-jun; Lim Ju-Young; Shin Sang Hoon; 김경호; Chang, Joonyeon; SW LEE |