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Showing results 1 to 17 of 17

Issue DateTitleAuthor(s)
2021-10A highly controllable doping technique via interdiffusion between epitaxial germanium layers and GaAsKim, Hansung; Ju, Gunwu; Kim, Seung-Hwan; Lee, Kiyoung; Jeong, Myoungho; Koo, Hyun Cheol; Kim, Hyung-jun
2018-01Double-gated ultra-thin-body GaAs-on-insulator p-FETs on SiShim, Jae-Phil; Kim, Seong Kwang; Kim, Hansung; Ju, Gunwu; Lim, Heejeong; Kim, SangHyeon; Kim, Hyung-jun
-Epitaxial growth of strained germanium using InxAl1-xAs buffer layerKIM HANSUNG; Shim Jae-Phil; Ju, Gunwu; LIM HEEJEONG; kim seong kwang; Sanghyeon Kim; Kim Hyung-jun
-Growth temperature dependent Ge epitaxy on GaAs(100) substrateLIM HEEJEONG; Shim Jae-Phil; Ju, Gunwu; KIM HANSUNG; kim seong kwang; Sanghyeon Kim; Kim Hyung-jun
2018-10Heat Shunting by Innovative Source/Drain Contact to Enable Monolithic 3D Integration of InGaAs MOSFETsKim, SangHyeon; Kim, Seong Kwang; Shin, SangHoon; Han, Jae-Hoom; Grum, Dae-Myeong; Kim, Hyung-jun; Lee, Subin; Kim, Han Sung; Ju, Gunwu; Song, Jin Dong; Alam, Muhammad A.; Shim, Jae-Phil
2018-05Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III-V and Ge MaterialsKim, Sang-Hyeon; Kim, Seong-Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Ju, Gunwu; Kim, Han-Sung; Lim, Hee-Jeong; Lim, Hyeong-Rak; Han, Jae-Hoon; Lee, Subin; Kim, Ho-Sung; Bidenko, Pavlo; Kang, Chang-Mo; Lee, Dong-Seon; Song, Jin-Dong; Choi, Won Jun; Kim, Hyung-Jun
2017-10Heterogeneous Integration toward Monolithic 3D ChipKim, SangHyeon; Kim, Seong-Kwang; Shim, Jae-Phil; Geum, Dae-myeong; Ju, Gunwu; Kim, Han Sung; Kim, Hyung-jun; Lim, Hyeong Rak; Han, Jae-Hoon; Kang, ChangMo; Lee, Dong Seon; Song, Jin Dong; Choi, Won Jun; LIM, HEE JEONG
2018-03Highly reproducible high-index-contrast distributed Bragg reflectors with an oxidized digital-alloy AlGaAsJu, Gunwu; Lee, Subin; Na, Byung Hoon; Kim, Hyung-Jun; Song, Young Min
2019-08Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETsKim, Sanghyeon; Kim, Seong Kwang; Shin, Sanghoon; Han, Jae-Hoon; Geum, Dae-Myeong; Shim, Jae-Phil; Lee, Subin; Kim, Hansung; Ju, Gunwu; Song, Jin Dong; Alam, M. A.; Kim, Hyung-Jun
2018-03Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III-V TemplatesShim, Jae-Phil; Kim, Han-Sung; Ju, Gunwu; Lim, Hyeong-Rak; Kim, Seong Kwang; Han, Jae-Hoon; Kim, Hyung-Jun; Kim, Sang-Hyeon
2020-09Selective and Sensitive Photon Sieve Based on III-V Semiconductor Nanowire Forest Fabricated by Lithography-Free ProcessLee, Gil Ju; Park, Kwangwook; Kim, Min Seok; Chang, Sehui; Seok, Tae Joon; Park, Hong-Gyu; Ju, Gunwu; Kim, Kyujung; Song, Young Min
2018-03Suppressing nonradiative recombination in crown-shaped quantum wellsJu, Gunwu; Na, Byung Hoon; Park, Kwangwook; Hwang, Hyeong-Yong; Jho, Young-Dahl; Myoung, NoSoung; Yim, Sang-Youp; Kim, Hyung-jun; Lee, Yong Tak
2021-09-05Surface morphology evolution and underlying defects in homoepitaxial growth of GaAs (110)Kim, Hansung; Yeu, In Won; Han, Gyuseung; Ju, Gunwu; Lee, Yun Joong; Shin, Young-hun; Choi, Jung-Hae; Koo, Hyun Cheol; Kim, Hyung-jun
-Thin body n- and p-GaAs FET on Si for CMOS integrationShim Jae Phil; Ju, Gunwu; kim seong kwang; KIM HANSUNG; Sanghyeon Kim; Kim Hyung-jun
-Thin body p-GaAs junctionless FET on Si via wafer bonding and epitaxial lift-off technologyShim Jae-Phil; Ju, Gunwu; KIM HANSUNG; kim seong kwang; LIM HEEJEONG; Sanghyeon Kim; Kim Hyung-jun
-Ultra-Thin Body Ge(110)-OI on Si fabrication from Ge/AlAs/GaAs Substrate via wafer bonding technologyShim Jae Phil; KIM HANSUNG; Ju, Gunwu; Hyeong rak Lim; Kim Seong Kwang; Jae-Hoon Han; Sanghyeon Kim; Kim Hyung-jun
2022-11Vertical homo-junction In0.53Ga0.47As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decadeBaek, Ji-Min; Kim, Hyo-Jin; Yoo, Ji-Hoon; Shin, Ju-Won; Shin, Ki-Yong; Amir, Walid; Ju, Gunwu; Kim, Hyung-Jun; Oh, Joohee; Kim, Hyoungsub; Kim, Tae-Woo; Kim, Dae-Hyun
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