| - | A self-assembled silicon quantum dot transistor operating at room temperature | 최범호; 황성민; I. G. Kim; 신형철; KIM YOUN; KIM EUN KYU |
| - | A silicon self assembled quantum dot transistor operating at room temperature | 최범호; 황성우; I.G. Kim; 신형철; KIM YOUN; KIM EUN KYU |
| - | AlGaAs/GaAs heteroface solar cells grown by metalorganic chemical vapor deposition | PARK YOUNG KYUN; Kim Seong Il; KIM YOUN; KIM EUN KYU; Kim Yong Tae; Min Suk-Ki |
| - | Anharmonic decay of phonons in silicon from third-order density-functional perturbation theory | PARK YOUNG KYUN; Kim Seong Il; KIM YOUN; KIM EUN KYU; Min Suk-Ki |
| - | Carbon doping characteristics in GaAs grown by LPMOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim |
| - | Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD. | SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; KIM MOO SUNG; Min Suk-Ki; 곽명현; 마동성 |
| - | Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4. | SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; Min Suk-Ki; KIM MOO SUNG; 최인훈 |
| - | Carbon incorporation into GaAs epilayers grown on high-index GaAs substrates by metalorganic chemical vapor deposition | SON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Characteristics of C-doped GaAs and critical layer thickness. | Kim Seong Il; EOM KYUNG SOOK; KIM YOUN; KIM MOO SUNG; Min Suk-Ki; 곽명현; 마동성 |
| - | Characterization for GaAs/AlGaAs superlattice grown by LPMOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; CHO HOON YOUNG |
| - | Control of the lateral growth rate during MOCVD growth on patterned GaAs substrates with CCl//4. | Kim Seong Il; KIM MOO SUNG; Min Suk-Ki; KIM YOUN |
| - | Crystallographic orientation dependence of carbon incorporation into GaAs epilayers | SON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Crystallographic orientation dependence of carbon incorporationin to GaAs epilayers using CBr ₄ and CCl ₄ | SON CHANG-SIK; Kim Seong Il; KIM YOUN; 황성민; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; 최인철 |
| - | Direct transport measurements through an ensemble of if InAs self-assembled quantum dots | 정석구; 최범호; KIM SEOK IL; 현찬경; MIN BYUNG DON; 황성우; PARK JEONG HO; KIM YOUN; KIM EUN KYU; Min Suk-Ki |
| - | Effect of atomic bond structure on crystal orientation dependence of carbon doping in GaAs grown by MOCVD | PARK YOUNG KYUN; Kim Seong Il; KIM YOUN; SON CHANG-SIK; KIM EUN KYU; Min Suk-Ki |
| - | Effect of crystallographic orientation on carbon incorporation into GaAs and AlGaAs epilayers grown by metalorganic chemical vapor deposition. | SON CHANG-SIK; Kim Seong Il; Min Suk-Ki; KIM EUN KYU; KIM YOUN; 최인훈 |
| - | Enhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4. | SON CHANG-SIK; 황성민; Kim Seong Il; 황성민; KIM MOO SUNG; Min Suk-Ki; KIM EUN KYU; KIM YOUN |
| - | Enhancement of side wall growth rate during MOVPE growth on patterned substrates with CCl//4. | KIM YOUN; KIM MOO SUNG; Kim Seong Il; 황성민; KANG JOON MO; 박양근; Min Suk-Ki |
| - | Epitaxial technology of compound semiconductor by MOCVD. | KIM MOO SUNG; KIM YOUN; EOM KYUNG SOOK; Kim Seong Il; Min Suk-Ki |
| - | Fabrication and characterization of homostructure GaAs δ -doped FETs. | KANG KWANG NHAM; Lee Jung Il; KIM YOUN; Han Il Ki; Min Suk-Ki; Y. J. Lee |
| - | Fabrication and characterization of planar resonant tunneling devices incorporating Inas self-assembled quantum dots | 정석구; 황성우; PARK JEONG HO; KIM YOUN; KIM EUN KYU |
| - | Fabrication of HEMT employing delta-doping layer grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; 김현수 |
| - | Fabrication of high-efficiency heteroface AlGaAs/GaAs solar cells grown by MOCVD | 황성민; Kim Seong Il; 이달진; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM YOUN |
| - | Fabrication of quantum dot transistors incorporating single self-assembled quantum dot | 황성우; 정석구; PARK JEONG HO; KIM YOUN; KIM EUN KYU |
| - | Fabrication of quantum well high electron mobility transistor grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; K. H. Yoo; G. Ihm; S. K. Noh |
| - | Fabrication of quantum well laser diode grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim; H. S. Oh |
| - | Growth behavior on V-grooved high miller index GaAs substrates by MOCVD. | Park Young Ju; KIM MOO SUNG; KIM YOUN; LEE MIN-SUK; Kim Seong Il; Min Suk-Ki |
| - | Growth interruption dependence of self-assembling behavior of InGaAs quantum dots on exact and misoriented (100) GaAs substrates | KIM YOUN; Min Suk-Ki; KIM EUN KYU; MIN BYUNG DON |
| - | High uniform growth of epilayers by LPMOCVD. | KIM MOO SUNG; KIM YOUN; CHO HOON YOUNG; 강명주; Kim Seong Il; Min Suk-Ki |
| - | Lateral growth rate control of GaAs and AlGaAs by CCl//4 during MOCVD on patterned substrates. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; KANG JOON MO; 황성민; 박양근 |
