Browsing byAuthorKim Hyung-jun
Showing results 1 to 30 of 68
| Issue Date | Title | Author(s) |
|---|---|---|
| - | A Fabrication of Epitaxial Ferromagnetic Spin injector and detector on InAs 2DEG system by clustor MBE | 김경호; Kim Hyung-jun; SONG, JIN-DONG; Koo, Hyun Cheol; 김영근; Han, Suk Hee |
| - | Analysis of current-voltage characteristics of GaAs/MgO/Fe and InGaAs/MgO/Fe junction | Shim Seong Hoon; Chang, Joonyeon; 김경호; Kim Hyung-jun; Han, Suk Hee; J.S. Moodera; Lee, Yun-Hi |
| - | Analysis of current-voltage characteristics of GaAs/MgO/Fe junction | Shim Seong Hoon; Chang, Joonyeon; 김경호; Kim Hyung-jun; Han, Suk Hee; Lee, Yun-Hi |
| - | Characteristics of spin-orbit interaction parameter in a two-dimensional electron gas layer | Park Youn-Ho; Koo, Hyun Cheol; 김경호; Kim Hyung-jun; Han, Suk Hee |
| - | Detection of Rashba field using a rotational applied field | Jang Hyuncheol; Park Youn Ho; Koo, Hyun Cheol; Kim Hyung-jun; Chang, Joonyeon; Kim, Hi Jung |
| - | Determination of spin-orbit interaction in InAs heterostructure | Lee, Tae-young; Chang, Joonyeon; 김경호; Kim Hyung-jun; Koo, Hyun Cheol; Han, Suk Hee |
| - | Determination of spin-orbit interacton parameter in InAs-inserted heterostructure | Lee, Tae-young; Chang, Joonyeon; 김경호; Kim Hyung-jun; Koo, Hyun Cheol; Han, Suk Hee |
| 2007-12 | Directed arrangement of Ge quantum dots on Si mesas by selective epitaxial growth | Kim Hyung-jun; Kang Wang |
| - | Electric-field-induced spin injection enhancement at a ferromagnet-semiconductor interface | Koo, Hyun Cheol; Park Youn-Ho; 김경호; Kim Hyung-jun; Chang, Joonyeon; Han, Suk Hee |
| - | Electrical Field Control of Spin-orbit Interaction in Modulation-doped InAs Quantum Well Structure | 김경호; Kim Hyung-jun; Koo, Hyun Cheol; Han, Suk Hee |
| - | Electrical observation of the spin Hall effects in InAs-inserted heterostructure | Lee, Tae-young; Chang, Joonyeon; Koo, Hyun Cheol; Kim Hyung-jun; Han, Suk Hee |
| - | Electrical spin injection and detection in a GaAs(110) channel | KIM HANSUNG; Park, hee-gyum; Kim Seong Kwang; Hyeong rak Lim; Koo, Hyun Cheol; Kim Hyung-jun |
| - | Electrical spin injection and detection into In53Ga47As and InAs quantum well structure | Park Youn-Ho; Lee, Tae-young; 김경호; Kim Hyung-jun; Koo, Hyun Cheol; Chang, Joonyeon; Han, Suk Hee |
| - | Enhancement of gate controlled spin-orbit interaction via potential asymmetry of InAs quantum well | 김경호; Kim Hyung-jun; Koo, Hyun Cheol; Chang, Joonyeon; Han, Suk Hee |
| 2006-12 | Epitaxial Growth of Semiconductor Self-Assembled Quantum Dots | Kim Hyung-jun; Zuo Ming Zhao; Bin Shi; J Lin; Ya-Hong Xie |
| - | Epitaxial growth of strained germanium using InxAl1-xAs buffer layer | KIM HANSUNG; Shim Jae-Phil; Ju, Gunwu; LIM HEEJEONG; kim seong kwang; Sanghyeon Kim; Kim Hyung-jun |
| - | Epitaxial growths of Fe and MgO layers on GaAs (001): Microstructure and magnetic property | Kim Kyung-Ho; Kim Hyung-jun; Ahn, Jae Pyoung; Seung-Cheol Lee; Won, Sung Ok; Jun Woo Choi; Chang, Joonyeon; Kim Young Keun |
| - | Epitaxial Relationship for the Fe/MgO/InxGa1-xAs Heterostructure | 김경호; Kim Hyung-jun; shin il jae; Han, Suk Hee |
| - | Epitaxial Relationship of Fe/MgO on InxGa1-xAs Substrates | Kim Kyung Ho; Kim Hyung-jun; shin il jae; HAN, JUN HYUN; Han, Suk Hee |
| - | Fabrication of Ultra-low Dit(E) InGaAs MOSFETs | Kim Seong Kwang; Shim Jae Phil; Geum Daemyeong; Chang Zoo Kim; KIM HANSUNG; SONG, JIN-DONG; Sung-Jin Choi; Dae Hwan Kim; Choi, Won Jun; Kim Hyung-jun; Dong Myong Kim; Sanghyeon Kim |
| - | Gate controlled spin-orbit coupling in InAs-inserted quantum well structure | Kim Kyung-Ho; Park Youn Ho; Koo, Hyun Cheol; Chang, Joonyeon; Kim Hyung-jun; Kim Young Keun |
| - | Gate controlled spin-orbit coupling in the InAs quantum well structure | Kim Kyung-ho; Kim Hyung-jun; Oh Jungwoo |
| - | Gate-Control of Spin-Orbit Coupling in InAs HEMT Structures on Si Substrates | Kim Hyung-jun |
| - | Gate-controlled Spin-orbit Interaction in a Double-sided doped InAs Quantum well structure | Kim Kyung Ho; Kim Hyung-jun; Koo, Hyun Cheol; Chang, Joonyeon; Han, Suk Hee; 김영근 |
| - | Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates | Shin Jaekyun; Kim Kyung-Ho; Doo-Seung Um; Hochan Lee; Seongdong Lim; Chang, Joonyeon; Koo, Hyun Cheol; Min-Wook Oh; Hyunhyub Ko; Kim Hyung-jun |
| - | Growth temperature and thickness dependent magnetic anisotropy in L10 ordered FePd thin films with perpendicular magnetic anisotropy | Kim Hyeon Seung; Jun Woo Choi; Kim Hyung-jun; Min, Byoung Chul; Lim, Sang-Ho |
| - | Growth temperature dependent Ge epitaxy on GaAs(100) substrate | LIM HEEJEONG; Shim Jae-Phil; Ju, Gunwu; KIM HANSUNG; kim seong kwang; Sanghyeon Kim; Kim Hyung-jun |
| - | High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n- doping on InSb/GaAs | SONG, JIN-DONG; Kim Hyung-jun; Shin Sang Hoon; Su youn, Kim |
| - | High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n-doping on InSb/GaAs | Shin Sang Hoon; SONG, JIN-DONG; Su youn, Kim; Kim Hyung-jun; Chang, Joonyeon; Han, Suk Hee |
| - | Impact of Ground Plane Doping on InGaAs-OI MOSFETs | Kim Seong Kwang; Shim Jae Phil; Geum Daemyeong; 김재원; 김창주; KIM HANSUNG; SONG, JIN-DONG; 최성진; 김대환; Choi, Won Jun; Kim Hyung-jun; 김동명; Sanghyeon Kim |
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