| - | 1/f noise in schottky barrier structure | Lee Jung Il; Han Il Ki; KIM HWE JONG; 김동명; J. Brini; A. Chovert; C. A. Dimitriadis |
| - | A one-photon persistent spectral hole burning in Sm2+-doped Mg0.5Sr0.5FCI0.5Br0.5 at room temperature | BAE HYUN SOOK; YOU BYUNG YONG; Lee Jung Il; 변종용; KIM CHANG HONG; Ju Zhe Jin; 서효진; 장기완 |
| - | A study on the instability in PECVD-SiNx/InP structure utilizing capacatance and conductnace techniques. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; LEE MYOUNG BOG |
| - | A variation of DC and microwave characteristics in pseudomorphic HEMT's under optical illumination. | KANG KWANG NHAM; KIM HWE JONG; D. H. Woo; S. J. Kim; D. M. Kim; H. Chung; Lee Seok; Han Il Ki; W. J. Choi; S. H. Kim; Lee Jung Il; K. Cho |
| - | Active and passive element modeling for MMIC, talking process conditions into account. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; Yoo Jong Lee; Kim Seong Il; S. H. Hong |
| - | Analysis of GaAs schottky contact traveling wave optical coupler. | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; 홍성훈 |
| - | Analysis of the HR coated facet effect on the spectral characteristics of a three-section DBR laser under frequency tuning. | KANG KWANG NHAM; Lee Seok; S. H. Kim; Lee Jung Il; D. M. Kim; H. L. Park |
| - | Analytic model for the gate current of MODFET's with and without photonic control | 김희종; 김동명; Han Il Ki; Choi Won Jun; Jacques Zimmermann; Lee Jung Il |
| 1992-01 | Auger electron spectroscopy analysis of Au/Ti/TiNxGaAs structure. | KANG KWANG NHAM; Lee Jung Il; HAN SEUNG HEE; CHOI BYEONJ JIN; V. Bosy; Han Il Ki |
| - | Carrier lifetime in dielectric cap disordered GaAs/AlGaAs quantum well by SiN capping layer. | W. J. Choi; Lee Seok; D. Woo; Lee Jung Il; S. K. Kim; J. H. Chu; S. K. Yu; KANG KWANG NHAM; D. Kim; K. Cho |
| - | CBE 에서 표면 장벽층의 두께에 따른 양자우물의 광학적 특성 . | 송기봉; Woo Deok Ha; Lee Seok; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM; 조규만 |
| - | Characteristics of 1.55 ㎛ diffraction-limited high-power LD with different p-doping profiles | Han Il Ki; 조시형; Woo Deok Ha; Kim Sun Ho; Lee Jung Il; F.G. Johnson; M. Dagenais |
| - | Charge trapping instabilities in SiO2/InP MIS structures. | KANG KWANG NHAM; Lee Jung Il; 최병두; KIM CHOONG HWAN; 임한조; Han Il Ki |
| - | Correlation between threshold voltage shift and gate current change in MODFET's under optical illumination | KIM HWE JONG; 김동명; Han Il Ki; Choi Won Jun; Lee Jung Il |
| - | Density of states of 2DEG determined from the complex magneto capacitance of a GaAs/AlGaAs heterostructure. | Kim Seong Il; Lee Jung Il; B. B. Goldberg; P. J. Stiles |
| - | Dielectric cap disordering of InGaAs/InP quantum well by PECVD grown SiN and SiO2. | KANG KWANG NHAM; KIM HWE JONG; W. J. Choi; Lee Seok; D. Woo; Han Il Ki; S. K. Kim; S. H. Kim; Lee Jung Il |
| - | Effect of linewidth enhancement factor in the 1.55-㎛ MQW high-power laser diodes | Han Il Ki; Si Hyung Cho; Lee Jung Il |
| - | Electrical properties of SiNx/InP structure. | KANG KWANG NHAM; Lee Jung Il; KIM CHOONG HWAN; 권상덕; 최병두; 임한조; Han Il Ki |
| - | Enhancement of optical properties of InGaAs/GaAs self-assembled quantum dots by thermal annealing with a SiNx/SiO ₂ capping layer | J.H. Lee; Choi Won Jun; Park Young Ju; Han Il Ki; Lee Jung Il; Cho Woon Jo; E.K. Kim; C.M. Lee; H.-W. Kim |
| - | Fabrication and characterization of high speed InP-MSM photodetectors. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; Yoo Jong Lee; Choi Won Jun; KPARK KYUNG HYUN |
| - | Fabrication and characterization of homostructure GaAs δ -doped FETs. | KANG KWANG NHAM; Lee Jung Il; KIM YOUN; Han Il Ki; Min Suk-Ki; Y. J. Lee |
| - | GaAs 기판상에 구성된 방향성 결합기를 이용한 진행파형 광변조기의 해석 . | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; 홍성철; Han Il Ki |
| - | Gate voltage dependence parasitic resistence in LDD MOSFETs. | KANG KWANG NHAM; Lee Jung Il; LEE MYOUNG BOG; Yoo Jong Lee; 김동명; Han Il Ki |
| - | Growth and characterization of silicon nitride films by PECVD. | KANG KWANG NHAM; Lee Jung Il; J. H. Jo; Han Il Ki; Y. J. Lee |
| - | High speed optical modulators on III-V semiconductors. | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; 홍성철 |
| - | Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO ₂ and SiNx capping films. | J.H. Lee; Choi Won Jun; Park Young Ju; Han Il Ki; Cho Woon Jo; Lee Jung Il; E.K. Kim |
| - | Insulating layer grown by PECVD for InP MISFET. | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; Han Il Ki; Yoo Jong Lee; LEE MYOUNG BOG; 조준환 |
| - | Low frequency excess noise modeling in semiconductor heterostructure devices | Han Il Ki; Choi Won Jun; 장브리니; 알렌쇼베; Lee Jung Il |
| - | Low frequency noise in gate current of HEMT structures | Lee Jung Il; Han Il Ki; J. Brini; A. Chovet |
| - | Low frequency noise in HEMT structure | Han Il Ki; Lee Jung Il; J. Brini; A. Chovet |
