- | Fabrication and characterization of delta-doped In0.2Ga0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy | Kim Seong Il; H.H. Tan; C. Jagadish; L.V. Dao; M. Gal |
1999-02 | Fabrication and characterization of ferroelectric Pb(ZrxTi1-x)O-3 thin films by metalorganic chemical vapor deposition | Song, HS; Kim, TS; Kim, CE; Jung, HJ |
- | Fabrication and characterization of planar resonant tunneling devices incorporating Inas self-assembled quantum dots | 정석구; 황성우; PARK JEONG HO; KIM YOUN; KIM EUN KYU |
1990-01 | Fabrication of AlGaAs/GaAs HEMT grown by MOCVD. | 김무성; 김용; 엄경숙; 김성일; 민석기 |
2009-07 | Fabrication of Bismuth Telluride-Based Alloy Thin Film Thermoelectric Devices Grown by Metal Organic Chemical Vapor Deposition | Kwon, Sung-Do; Ju, Byeong-Kwon; Yoon, Seok-Jin; Kim, Jin-Sang |
- | Fabrication of GaAs/AlGaAs DH laser diode grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM MOO SUNG |
- | Fabrication of HEMT employing delta-doping layer grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; 김현수 |
- | Fabrication of multi-stacked InAs/InGaAs dot-in-a-well structures by metal organic chemical vapour deposition for quantum dot infrared photodetector | Jungsub Kim; Ha Seung Kyu; Changjae Yang; Jaeyel Lee; Choi, Won Jun; Euijoon Yoon |
- | Fabrication of noble quantum wire structures grown by low pressure MOCVD using selective area epitaxy | Kim Seong Il; Jewon Kim; PARK YOUNG KYUN; Kim Yong Tae |
- | Fabrication of quantum dot transistors incorporating single self-assembled quantum dot | 황성우; 정석구; PARK JEONG HO; KIM YOUN; KIM EUN KYU |
- | Fabrication of quantum well high electron mobility transistor grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; K. H. Yoo; G. Ihm; S. K. Noh |
- | Fabrication of quantum well laser diode grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim; H. S. Oh |
1993-01 | Fabrication of single GaAs substrate by MOCVD. | 김성일; 민석기; 김용; 김무성; 이민석; 김영덕 |
1992-01 | Fabrication of single quantum well separate confinement heterostructure laser diode grown by MOCVD. | 김성일; 민석기; 김용; 김무성; 엄경숙; C. J. Kim; H. S. Oh |
1997-03 | Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers | Kim, TG; Hwang, SM; Kim, EK; Min, SK; Jeon, JI; Leem, SJ; Jeong, J; Park, JH |
- | Fabrication of wirelike In0.5Ga0.5As quantum dots on 2˚-off GaAs (100) substrates | KIM HEO JEN; Park Young Ju; 박영민; 박세기; KIM EUN KYU; 김태환 |
1999-09 | Facet evolution of Al0.5Ga0.5As/GaAs multilayers grown on mesa-patterned GaAs substrate | Kim, HJ; Park, YK; Kim, SI; Kim, EK; Kim, TW |
1997-01 | Formation of circular-shaped crystalline phases embedded in amorphous PbTiO3 thin films grown by MOCVD | Yom, SS; Wang, CH; Kim, YT |
1993-01 | GaAs 집적회로 제조를 위한 에피 성장 연구 | 박용주; 김무성; 김용; 조훈영; 김성일; 민석기; 엄경숙 |
1996-01 | GaAs(100) 및 GaAs(311)A 기판위에 성장시킨 InGaAs 에피층의 격자변형에 관한 연구 | 손창식; 진현철; 한철구; 이정훈; 강준모; 김용; 김무성; 민석기; 김창수 |
1998-11 | GaAs/AlGaAs buried channel stripe lasers by single-stage MOCVD on V-grooved substrates | Kim, EK; Kim, TG; Son, CS; Hwang, SM; Kim, Y; Park, YK; Min, SK |
1996-01 | GaAs/AlGaAs quantum wire laser with an effective current blocking layer. | 김성일; 민석기; 김태근; 김은규; 박경현; 황성민; 박정호 |
2013-10 | Gadolinia Doped Ceria Thin Films Prepared by Aerosol Assisted Chemical Vapor Deposition and Applications in Intermediate-Temperature Solid Oxide Fuel Cell | Schlupp, M. V. F.; Kurlov, A.; Hwang, J.; Yang, Z.; Doebeli, M.; Martynczuk, J.; Prestat, M.; Son, J. -W.; Gauckler, L. J. |
2003-06 | Growth and characterization of triangular InGaAs/GaAs quantum wire structures grown by low-pressure metalorganic chemical vapor deposition | Kim, SI; Son, CS; Kim, YH; Kim, YT |
2003-08 | Growth and characterization of triangular-shaped AlGaAs/GaAs and InGaAs/GaAs quantum wire structures | Kim, S; Kim, YH; Lee, YJ; Son, CS |
2000-11 | Growth behavior of GaAs/AlGaAs multi-layers grown on U-grooved GaAs fusion layer on InP substrate | Hwang, SM; Park, YJ; Nah, J; Kim, EK; Choi, IH |
- | Growth behavior on V-grooved high miller index GaAs substrates by MOCVD. | Park Young Ju; KIM MOO SUNG; KIM YOUN; LEE MIN-SUK; Kim Seong Il; Min Suk-Ki |
2013-06 | Growth characteristics and electrical properties of diameter-selective InAs nanowires | Shin, Jae Cheol; Lee, Ari; Kim, Hyo Jin; Kim, Jae Hun; Choi, Kyoung Jin; Kim, Young Hun; Kim, Nam; Bae, Myung-Ho; Kim, Ju-Jin; Kim, Bum-Kyu |
1992-01 | Growth of Al//2O//3 epitaxial films on p-Si substrates by low-pressure metalorganic chemical vapor deposition. | 염상섭; 윤영수; T. W. Kim; W. N. Kang; P. H. Hur; C. Y. Kim |
- | Growth of Bi-Te Based Materials on GaAs and Sapphire Substrates for High Performance Thermoelectric Applications | KIM, JIN SANG; Kwon Sung Do; Kim jeong hun; YOON, SEOK JIN; SUH, SANG HEE |