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Showing results 154 to 183 of 220

Issue DateTitleAuthor(s)
-Rapid thermal annealing dependence of deep electron traps in GaAs-on-Si grown by MOCVD.KIM EUN KYU; CHO HOON YOUNG; KIM YOUN; 김현수; Min Suk-Ki; M. S. Kim
-RIE 로 처리된 GaAs 표면의 전기적 특성연구 .Kim Seong Il; Han Il Ki; Choi Won Jun; Lee Jung Il; KANG KWANG NHAM; 조준환; 임한조; Yoo Jong Lee; LEE MYOUNG BOG
1990-09SELENIUM AND SILICON DELTA-DOPING PROPERTIES OF GAAS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITIONKIM, Y; KIM, MS; MIN, SK; LEE, CC; YOO, KH
-Self-organized one-dimensional InAs quantum dots on V-grooves.C. S. Son; I. H. Choi; Kim, Seong Il; Park, Young Ju; Kim, Yong Tae; K. Komori; M. Ogura
-Single precursor MOCVD of AlN thin films & the stoichiometry controlling안창규; 경제홍; CHO SEONG HOON; HAN SUNG HAN; 최승철; Je-Hong Kyoung
-Single precursor MOCVD of aluminum nitride경제홍; 최승철; CHO SEONG HOON; HAN SUNG HAN
2000-02SrBi2Ta2O9 thin films grown by MOCVD using a novel double metal alkoxide precursorShin, DS; Choi, HS; Kim, YT; Choi, IH
1996-03Strain and critical layer thickness analysis of carbon-doped GaAsKim, SI; Kim, MS; Min, SK
1990-04Stress released layers formed by pulsed ruby laser annealing on GaAs-on-Si.김용; 김무성; KIM, EUN KYU; 김현수; 민석기; 이현우; 김재관; 이주천
1992-09Strip-loaded 반도체 도파로에서 Bend 높이에 따른 복사손실 .김용; 변영태; 박경현; 김선호; 최상삼
1993-04Structural and electrical properties of BaTiO3 thin films grown on p­InSb substrate by metalorganic chemical vapor deposition at low temperature염상섭; 윤영수; W. N. Kang; T. W. Kim; M. Jung; H. J. Kim
1993-03STRUCTURAL AND ELECTRICAL-PROPERTIES OF AL2O3 THIN-FILMS ON P-SI GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITIONKIM, TW; YOM, SS; KANG, WN; YOON, YS; KIM, C; KIM, S; YANG, IS; WEE, YJ
2014-08Structural and Optical Properties of the InxGa1-xAs Nanowires Grown on SiO2 via Vapor-Liquid-Solid MethodShin, Hyun Wook; Shin, Jae Cheol; Kim, Do Yang; Choi, Won Jun; Choe, Jeong-Woo
-Structural Characteristics of Bi2Te3 and Sb2Te3 films on (001) GaAs Substrates grown by MOCVDKim, Jeong-Hun; Kwon sung-do; JEONG, DAE YONG; Joo, ByeongKwon; YOON, SEOK JIN; KIM, JIN SANG
2013-05Structural Characteristics of Ternary InxGa1-xAs Nanowires on Si (111) Grown via Au-Catalyzed VLSShin, Jae Cheol; Kim, Do Yang; Park, Jae Hyung; Oh, Si Duck; Ko, Hang Ju; Han, Myung-Soo; Kim, Jae Hun; Choi, Kyoung Jin; Kim, Hyo Jin
1993-02Structural properties of BaTiO3 thin films on Si grown by metalorganic chemical vapor deposition염상섭; 윤영수; W. N. Kang; H. S. Shin; T. W. Kim; J. H. Lee; D. J. Choi; S. S. Back
1988-10Structural properties of GaAs grown on (100) Si substrates by MOCVD김용; 김무성; 김현수; 민석기
2012-11Study of a-Plane GaN Epitaxial Lateral Overgrowth Using Carbonized Photoresist Mask on r-Plane SapphireJang, Samseok; Lee, Dohan; Kwon, Jun-hyuck; Kim, Sang-il; Yim, So Young; Lee, Jaesang; Park, Ji Hun; Byun, Dongjin
-Study of multi-stacked InAs quantum dot infrared photodetector grown by metal organic chemical vapor depositionJungsub Kim; Ha Seung Kyu; Changjae Yang; Jaeyel Lee; Sehun Park; Choi, Won Jun; Euijoon Yoon
2013-10Study on the defects in metal-organic chemical vapor deposited zinc tin oxide thin films using negative bias illumination stability analysisKim, Un Ki; Rha, Sang Ho; Kim, Jeong Hwan; Chung, Yoon Jang; Jung, Jisim; Hwang, Eun Suk; Lee, Joohwi; Park, Tae Joo; Choi, Jung-Hae; Hwang, Cheol Seong
1993-01Study on the lateral island extension for growth-intersupted GaAs/Al0.3Ga0.7As single quantum wells grown by atmospheric-pressure metalorganic chemical vapor deposition김용; 김성일; 김무성; 민석기; 이민석; 김영덕
2003-05Study on ZrO2 : Er thin films fabricated by metal-organic chemical vapor depositionPark, JH; Hong, KS; Cho, WJ; Chung, JH
1998-05-15Suppression of Ostwald ripening in In0.5Ga0.5As quantum dots on a vicinal (100) substrateMin, BD; Kim, Y; Kim, EK; Min, SK; Park, MJ
1994-07SURFACE MORPHOLOGIES OF BATIO3 THIN-FILMS BY ATOMIC-FORCE MICROSCOPYYOON, YS; YOON, YK; LEE, JY; YOM, SS
1995-01Surface properties and electrical behavior of GaAs treated with (NH//4)//2S//x solution.김성일; 민석기; 이주희; 김은규; 손맹호; 최원철; 최무용
1997-03-20Synthesis and characterization of [Ho(hfa)(3)(H2O)(2)]center dot triglyme; Molecular assembly of the potential rare-earth CVD precursorKang, SJ; Jung, YS; Sohn, YS
1997-01-20Synthesis and characterization of volatile and thermally stable europium beta-diketonate complexesKang, SJ; Jung, YS; Sohn, YS
1992-01Temperature dependence of photoluminescence for GaAs/AlGaAs single quantum well grown by MOCVD with and without growth-interuption.김성일; 민석기; 김용; 김무성; 엄경숙; 김영덕; 이민석
-Temperature dependence of photoluminescence peak from carbon-doped GaAs epilayers grown on high miller index GaAs substratesCho Shinho; SON CHANG-SIK; 이달진; Kim Seong Il; KIM YOUN; KIM EUN KYU; Min Suk-Ki
-Temperature dependence of the electrical properties of carbon doped GaAs.Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG

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