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A study of GaN characteristics affected by stress existing in N+-implanted Si(111) substrate

Authors

고의관; Park Young Ju; KIM EUN KYU; PARK CHAN-SOO; 이석현; 이정희; 조성호

Citation

Proc. 7th Korean Conf. on Semiconductors = 제 7 회 한국반도체 학술대회, pp.507 - 508

Keywords

GaN

URI

https://pubs.kist.re.kr/handle/201004/108912

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KIST Conference Paper > Others

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