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Showing results 6 to 10 of 10

Issue DateTitleAuthor(s)
2019-07Growth of Broadband Gain Quantum Dot Mode Locked Laser on Si with Varied InGaAs Well ThicknessJung, Daehwan; Norman, Justin; Liu, Songtao; Bowers, John; Wan, Yating; Gossard, Arthur; Shang, Chen
2019-10High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon SubstrateLiu, Songtao; Norman, Justin; Dumont, Mario; Jung, Daehwan; Torres, Alfredo; Gossard, Arthur C.; Bowers, John E.
2020-03Investigation of Current-Driven Degradation of 1.3 mu m Quantum-Dot Lasers Epitaxially Grown on SiliconBuffolo, Matteo; Samparisi, Fabio; Rovere, Lorenzo; De Santi, Carlo; Jung, Daehwan; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
2019-06Physical Origin of the Optical Degradation of InAs Quantum Dot LasersBuffolo, Matteo; Samparisi, Fabio; De Santi, Carlo; Jung, Daehwan; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
2020-07-14Recombination-enhanced dislocation climb in InAs quantum dot lasers on siliconMukherjee, Kunal; Selvidge, Jennifer; Jung, Daehwan; Norman, Justin; Taylor, Aidan A.; Salmon, Mike; Liu, Alan Y.; Bowers, John E.; Herrick, Robert W.
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