Showing results 3 to 8 of 8
Issue Date | Title | Author(s) |
---|---|---|
2012-10 | Fast and scalable memory characteristics of Ge-doped SbTe phase change materials | Cheong, Byung-ki; Lee, Suyoun; Jeong, Jeung-hyun; Park, Sohee; Han, Seungwu; Wu, Zhe; Ahn, Dong-Ho |
2010-03-29 | Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature | Wu, Zhe; Lee, Suyoun; Park, Young-Wook; Ahn, Hyung-Woo; Jeong, Doo Seok; Jeong, Jeung-hyun; No, Kwangsoo; Cheong, Byung-ki |
2012-07-31 | Infrared spectroscopic ellipsometry of Ge-doped SbTe alloys | Kang, Tae Dong; Sim, Kyung Ik; Kim, Jae Hoon; Wu, Zhe; Cheong, Byung-ki; Lee, Hosun |
2012-10 | Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTe | Zhang, Gang; Wu, Zhe; Jeong, Jeung-hyun; Jeong, Doo Seok; Yoo, Won Jong; Cheong, Byung-ki |
2011-03 | Multi-level cell storage with a modulated current method for phase-change memory using Ge-doped SbTe | Zhang, Gang; Wu, Zhe; Jeong, Jeung-Hyun; Jeong, Doo Seok; Yoo, Won Jong; Cheong, Byung-ki |
2010-01 | The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTe | Park, Young-wook; Lee, Hyun Seok; Ahn, Hyung Woo; Wu, Zhe; Lee, Suyoun; Jeong, Jeung-hyun; Jeong, Doo Seok; Yi, Kyung-woo; Cheong, Byung-ki |