Showing results 3 to 5 of 5
Issue Date | Title | Author(s) |
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2006-05-01 | Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors | Park, Jaehoo; Park, Tae Joo; Cho, Moonju; Kim, Seong Keun; Hong, Sug Hun; Kim, Jeong Hwan; Seo, Minha; Hwang, Cheol Seong; Won, Jeong Yeon; Jeong, Ranju; Choi, Jung-Hae |
2019-03 | Strategic Selection of the Oxygen Source for Low Temperature-Atomic Layer Deposition of Al2O3 Thin Film | Jin, Hyun Soo; Kim, Dae Hyun; Kim, Seong Keun; Wallace, Robert M.; Kim, Jiyoung; Park, Tae Joo |
2013-11 | Variation in the threshold voltage of amorphous-In2Ga2ZnO7 thin-film transistors by ultrathin Al2O3 passivation layer | Rha, Sang Ho; Kim, Un Ki; Jung, Jisim; Hwang, Eun Suk; Lee, Seung Jun; Jean, Woojin; Yoo, Yeon Woo; Choi, Jung-Hae; Hwang, Cheol Seong |