1997-05 | Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases | Kim, MS; Lee, C; Park, SK; Choi, WC; Kim, EK; Kim, SI; Ahn, BS; Min, SK |
1997-01 | Lateral growth rate control of GaAs on patterned substrates by CCl4 and CBr4 during MOCVD | Kim, SI; Kim, MS; Kim, Y; Hwang, SM; Min, BD; Son, CS; Kim, EK; Min, SK |
2000-05 | Performance and heat transfer characteristics of hydrocarbon refrigerants in a heat pump system | Chang, YS; Kim, MS; Ro, ST |
2005-07 | Performance of graphite electrode modified with carbon nanofibers for lithium ion secondary battery | Moon, SH; Jin, WJ; Kim, TR; Hahm, HS; Cho, BW; Kim, MS |
1996-08 | Properties of carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4 | Son, CS; Kim, SI; Kim, Y; Lee, MS; Kim, MS; Min, SK; Choi, IH |
1996-10 | Self-assembled quantum structures deposited by molecular beam epitaxy on GaAs (100) and (311)A substrates | Hahn, CK; Kim, EK; Jeun, IS; Kim, KM; Kim, MS; Min, SK; Park, JH |
1996-03 | Strain and critical layer thickness analysis of carbon-doped GaAs | Kim, SI; Kim, MS; Min, SK |
1996-01 | Thermodynamic analysis of extraction processes for the utilization of LNG cold energy | Lee, GS; Chang, YS; Kim, MS; Ro, ST |
2000-07 | Torque optimizing control with singularity-robustness for kinematically redundant robots | Chung, CY; Lee, BH; Kim, MS; Lee, CW |
2003-09-01 | Vapor-liquid equilibria for pentafluoroethane plus propane and difluoromethane plus propane systems over a temperature range from 253.15 to 323.15 K | Kim, JH; Kim, MS; Kim, Y |