| 1998-01 | Channel-switching active add/drop multiplexer with tunable gratings | Kim, SY; Lee, SB; Kwon, SW; Choi, SS; Jeong, J |
| 1997-06 | Effect of sapphire nitridation on GaN by MOCVD | Byun, D; Kim, G; Jeong, J; Lee, JI; Park, D; Kum, DW; Kim, B; Yoo, J |
| 1997-03 | Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers | Kim, TG; Hwang, SM; Kim, EK; Min, SK; Jeon, JI; Leem, SJ; Jeong, J; Park, JH |
| 1997-08 | Highly stable optical add/drop multiplexer using polarization beam splitters and fiber Bragg gratings | Kim, SY; Lee, SB; Chung, J; Kim, SY; Park, IJ; Jeong, J; Choi, SS |
| 2001-08 | Intrinsic stress in chemical vapor deposited diamond films: An analytical model for the plastic deformation of the Si substrate | Jeong, J; Kwon, D; Lee, WS; Baik, YJ |
| 1998-08-04 | Reactive ion (N-2(+)) beam pretreatment of sapphire for GaN growth | Byun, D; Jeong, J; Kim, HJ; Koh, SK; Choi, WK; Park, D; Kum, DW |
| 2004-08 | Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure | Heo, D; Han, IK; Lee, JI; Jeong, J |
| 2005-12-19 | Time-resolved analysis of the set process in an electrical phase-change memory device | Kang, DH; Cheong, B; Jeong, J; Lee, TS; Kim, IH; Kim, WM; Huh, JY |
