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Showing results 1 to 5 of 5

Issue Date	Title	Author(s)
2014-09-10	A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View	Seok, Jun Yeong; Song, Seul Ji; Yoon, Jung Ho; Yoon, Kyung Jean; Park, Tae Hyung; Kwon, Dae Eun; Lim, Hyungkwang; Kim, Gun Hwan; Jeong, Doo Seok; Hwang, Cheol Seong
2007-09	High speed phase change random access memory with (Ge1Sb2Te4)(0.9)(Sn1Bi2Te4)(0.1) complete solid solution	Ahn, Dong-Ho; Lee, Tae-Yon; Lee, Dong-Bok; Yim, Sung-Soo; Wi, Jung-Sub; Jin, Kyung-Bae; Lee, Min-Hyun; Kim, Ki-Bum; Kang, Dae-Hwan; Jeong, Han-ju; Cheong, Byung-ki
2013-12	Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials	Lee, Sang Woon; Choi, Byung Joon; Eom, Taeyong; Han, Jeong Hwan; Kim, Seong Keun; Song, Seul Ji; Lee, Woongkyu; Hwang, Cheol Seong
2019-04	Interface-Driven Phase Transition of Phase-Change Material	Choi, Minho; Choi, Heechae; Ahn, Jinho; Kim, Yong Tae
2009-05	Investigation of electrical characteristics of the In3Sb1Te2 ternary alloy for application in phase-change memory	Kim, Eun Tae; Lee, Jeong Yong; Kim, Yong Tae

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