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Showing results 1 to 2 of 2

Issue DateTitleAuthor(s)
2022-08Dramatically enhanced ambient effects in a multi-layer MoS2 transistor with channel thickness near maximum depletion widthPark, Chang Seon; Lee, Changwoo; Jung, Won Jun; Park, Min; Lee, Dong Su; Lee, Hong Seok; Jeon, Dae-Young
2022-06Electrostatically Controllable Channel Thickness and Tunable Low-Frequency Noise Characteristics of Double-Gated Multilayer MoS2 Field-Effect Transistors with h-BN DielectricJimin Park; NAM JUNHO; 손장엽; 정원준; 박민; 이동수; 전대영
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