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Showing results 1 to 2 of 2

Issue DateTitleAuthor(s)
1993-01CHARACTERISTICS OF HEAVILY CARBON-DOPED GAAS BY LPMOCVD AND CRITICAL LAYER THICKNESSKIM, SI; EOM, KS; KIM, Y; KIM, MS; MIN, SK; LEE, C; KWAK, MH; MA, DS
2002-01Growth of ultrahigh carbon-doped InGaAs and its applicationto InP/InGaAs(C) HBTsHan, JC; Song, JI; Park, SW; Woo, D
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