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Issue DateTitleAuthor(s)
2019-09-30Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H-2 annealing with Pt gate electrodeKim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Kim, Hansung; Han, Jae-Hoon; Hwang, Do Kyung; Song, Jin Dong; Kim, Hyung-jun; Kim, Sanghyeon
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