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Issue DateTitleAuthor(s)
2022-11Vertical homo-junction In0.53Ga0.47As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decadeBaek, Ji-Min; Kim, Hyo-Jin; Yoo, Ji-Hoon; Shin, Ju-Won; Shin, Ki-Yong; Amir, Walid; Ju, Gunwu; Kim, Hyung-Jun; Oh, Joohee; Kim, Hyoungsub; Kim, Tae-Woo; Kim, Dae-Hyun
1

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