| 2006-09-01 | An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode | Kang, Dae-Hwan; Kim, In Ho; Jeong, Jeung-hyun; Cheong, Byung-ki; Ahn, Dong-Ho; Lee, Dongbok; Kim, Hyun-Mi; Kim, Ki-Bum; Kim, Soo-Hyun |
| 2006-03 | Effects of Nitrogen Addition on the Properties of Ge-Doped SbTe Phase Change Memory Material | Cheong, Byung-ki; Kim, In Ho; Jung, Hanju; Lee, Taek Sung; Jeong, Jeung-hyun; Kang, Dae-Hwan; Kim, Won Mok; Ha, Jae-Geun |
| 2007-09 | High speed phase change random access memory with (Ge1Sb2Te4)(0.9)(Sn1Bi2Te4)(0.1) complete solid solution | Ahn, Dong-Ho; Lee, Tae-Yon; Lee, Dong-Bok; Yim, Sung-Soo; Wi, Jung-Sub; Jin, Kyung-Bae; Lee, Min-Hyun; Kim, Ki-Bum; Kang, Dae-Hwan; Jeong, Han-ju; Cheong, Byung-ki |
| 2005-09 | Kinetic Characteristics of FCC to Hexagonal Transformation in (Ge1Sb2Te4)(0.8)(Sn1Bi2Te4)(0.2) Chalcogenide Alloy for Phase Change Memory | Ahn, Dong-Ho; Kim, Hyun-Mi; Lee, Min-Hyun; Kang, Dae-Hwan; Cheong, Byung-ki; Kim, Ki-Bum |
| 2007-01-15 | Response to "Comment on 'Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases'" [J. Appl. Phys. 97, 093509 (2005)] | Lee, Bong-Sub; Abelson, John R.; Bishop, Stephen G.; Kang, Dae-Hwan; Cheong, Byung-ki; Kim, Ki-Bum |
| 2007-01 | Toward understanding the mechanism of nonlinear optical characteristics of PbTe thin film for nano-optical memory | Lee, Taek Sung; Lee, Hyun Seok; Cheong, Byung-Ki; Jeong, Jeung-Hyun; Kang, Dae-Hwan; Zhe, Wu; Kim, Won Mok; Kim, Donghwan; Cho, Kyuman |
| 2012-02-06 | Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory | Kang, Dae-Hwan; Kim, Nan Young; Jeong, Hongsik; Cheong, Byung-ki |
