| 2005-05 | Lasing wavelength and spacing switchable multiwavelength fiber laser from 1510 to 1620 nm | Han, YG; Kim, G; Lee, JH; Kim, SH; Lee, SB |
| 1999-11-16 | New pretreatment method of sapphire for GaN deposition | Byun, D; Kim, HJ; Hong, CH; Park, CS; Kim, G; Koh, SK; Choi, WK; Kum, DW |
| 1996-11-30 | Optimization of the GaN-buffer growth on 6H-SiC(0001) | Byun, D; Kim, G; Lim, D; Lee, D; Choi, IH; Park, D; Kum, DW |
| 1997-09 | Polymer surface modification by plasma source ion implantation | Han, S; Lee, Y; Kim, H; Kim, GH; Lee, J; Yoon, JH; Kim, G |
| 2001-12 | Postannealing effect of GaN on reactive ion beam pre-treated sapphire | Lee, SJ; Byun, D; Ko, J; Hong, CH; Kim, G |
| 2001-11 | Reduction of defects in GaN on reactive ion beam treated sapphire by annealing | Byun, D; Jhin, J; Cho, S; Kim, J; Lee, SJ; Hong, CH; Kim, G; Choi, WK |
| 1997-06 | The effect of substrate surface morphology on GaN by MOCVD | Kum, DW; Byun, D; Kim, G |
| 2005-12-01 | Wavelength spacing tunable multiwavelength fiber laser with lasing wavelength selectivity | Han, YG; Kim, G; Lee, JH; Lee, SB |
