| 2014-02 | Characteristics of InGaas/GaAs/AlGaAs Double Barrier Quantum Well Infrared Photodetectors | 박민수; 김호성; 양현덕; 송진동; 김상혁; 윤예슬; 최원준 |
| 2014-04 | Effect of Growth Temperature and Quantum Structure on InAs/GaAs Quantum Dot Solar Cell | 박문호; 김호성; 박성준; 송진동; 김상혁; 이유종; 최원준; 박정호 |
| 2015-07 | Enhanced open-circuit voltage of InAs/GaAs quantum dot solar cells by hydrogen plasma treatment | 김호성; 박민수; 김상현; 김상혁; 송진동; 최원준; JunHo Park; YooJong Lee |
| 2015-09 | Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate | 김상현; 박민수; 금대명; 김호성; 류근환; 양현덕; 송진동; 김창주; 최원준 |
| 2014-08 | Fabrication of GaAs single junction solar cell on Si substrate | 김상현; 박민수; 금대명; 양현덕; 김호성; 류근환; 송진동; 김창주; 최원준 |
| 2017-04 | Fabrication of high-quality GaAs-based photodetector arrays on Si | 최원준; 송진동; 김상현; 김호성; 금대명; Min-Su Park |
| 2018-05 | Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III-V and Ge Materials | 최원준; 송진동; 김형준; 김상현; 한재훈; 이수빈; 심재필; 주건우; 김성광; 김한성; 비덴코; 김호성; 금대명; 임희정; 임형락; Chang-Mo Kang; Dong Seon Lee |
| 2017-07 | InAs/GaAs quantum dot infrared photodetector
on a Si substrate by means of metal wafer
bonding and epitaxial lift-off | 최원준; 김상현; 김호성; 안승엽; GeunHwan Ryu; Ji Hoon Kyhm; Kyung Woon Lee; Jung Ho Park |
| 2016-03 | Indium-tin-oxide/GaAs Schottky barrier solar cells with embedded InAs
quantum dots | 최원준; 송진동; 김상현; 김호성; 박석인; 박민수; 박정호 |
| 2014-02 | Influence of InAs quantum dots on the transport properties of GaAs-based solar cell devices | Haeri Kim; 박문호; 박성준; 김호성; 송진동; 김상혁; Hogyoung Kim; 최원준; Dong-Wook Kim |
| 2014-02 | Investigation of Carrier Transport Mechanism in Schottky Type InAs/GaAs Quantum Dot Solar Cells | 김호성; 류근환; 양현덕; 박민수; 김상혁; 송진동; 최원준; 박정호 |
| 2019-02 | Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques | 최원준; 안승엽; 김호성; 류근환; 류한열 |
| 2012-07 | Realizing the Performance of LiCoPO4 Cathodes by Fe Substitution with Off-Stoichiometry | S.M.G. Yang; V. Aravindan; 조원일; 장덕례; 김호성; 이윤성 |
| 2018-03 | Room Temperature Operation of Mid-infrared InAs0.81Sb0.19 based Photovoltaic Detectors with an In0.2Al0.8Sb Barrier Layer grown on GaAs Substrate | 최원준; 송진동; 김상현; 안승엽; 김호성; 노일표; 강수석; 금대명; Hwanyeol Park; Euijoon Yoon |
| 2013-07 | Temperature-dependent electrical characteristics of GaAs compensated InAs quantum dot solar cells | Haeri Kim; Dong-Wook Kim; 박문호; 박성준; 김호성; 송진동; 최원준; 김상혁; Hogyoung Kim |
| 2021-04 | Vertical monolithic integration of wide- and narrow-bandgap semiconductor nanostructures on graphene films | 최원준; Youngbin Tchoe; Janghyun Jo; 김호성; Heehun Kim; Hyeonjun Baek; Keundong Lee; Dongha Yoo; Miyoung Kim; Gyu-Chul Yi |
