Browsing byAuthor신동석

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Showing results 1 to 12 of 12

Issue DateTitleAuthor(s)
-A proposal of Pt-SrBi//2Ta//2O//9/CeO//2/Si structure for non destructive read out memory devices신동석; Kim Yong Tae; 한용희
-Characteristics of SrBi//2Ta//2O//9/CeO//2/Pt/Si structure for non-volatile memory deviceHo Nyung Lee; Kim Yong Tae; 이창우; 신동석; 조성호
-Characteristics of SrTa2Bi2O9 thin films grown by MOCVD using a new strontium tantalum ethoxide (Sr[Ta(OEt)6]2) sourceKim Yong Tae; PARK YOUNG KYUN; 신동석; 최훈상; 최인훈
-Comparison in electrical properties SrBi//2Ta//2O//9/CeO//2/Si and SrBi//2Ta//2O//9/Si structures신동석; Kim Yong Tae; Ho Nyung Lee; 이창우; 최인훈
-Effect of insulator on memory window of metal ferroelectric insulator semiconductor field effect transistor (MEFISFET)-non destructive devicesKim Yong Tae; 이창우; 신동석; Ho Nyung Lee
-Effects of morphological changes of Pt/SrBi//2Ta//2O//9 interface on the electrical properties of ferroelectric capacitor신동석; Ho Nyung Lee; Kim Yong Tae; 최인훈
-Electrical properties of the Pt/SrBi//2Ta//2O//9/CeO//2/Si and Pt/SBi/Si structures한용희; Kim Yong Tae; Ho Nyung Lee; 신동석; 최인훈
-Influence of rapid thermal annealing of cerium oxide on the morphological and electrical properties of metal/ferroelectric/insulator/semiconductor capacitorHo Nyung Lee; 신동석; Kim Yong Tae; 조성호
-Low temperature crystallization of SrBi2Ta2O9 film by excimer laser irradiation설광수; Y. Ohki; H. Hiramatsu; 신동석; 최인훈; Kim Yong Tae
-The changes of the properties of Pt/SrBi2Ta2O9/Pt capacitors and Pt/SrBi2Ta2O9/CeO2/Si structures by post-annealing and their origin신동석; 최훈상; Ho Nyung Lee; Kim Yong Tae; PARK YOUNG KYUN; 최인훈
-Top electrode annealing effects in Pt/SrBi//2Ta//2O//9/CeO//2/Si structure신동석; Kim Yong Tae; 최인훈; 조성호
-(Undefined)신동석; Ho Nyung Lee; Kim Yong Tae; 최인훈