| - | A proposal of Pt-SrBi//2Ta//2O//9/CeO//2/Si structure for non destructive read out memory devices | 신동석; Kim Yong Tae; 한용희 |
| - | Characteristics of SrBi//2Ta//2O//9/CeO//2/Pt/Si structure for non-volatile memory device | Ho Nyung Lee; Kim Yong Tae; 이창우; 신동석; 조성호 |
| - | Characteristics of SrTa2Bi2O9 thin films grown by MOCVD using a new strontium tantalum ethoxide (Sr[Ta(OEt)6]2) source | Kim Yong Tae; PARK YOUNG KYUN; 신동석; 최훈상; 최인훈 |
| - | Comparison in electrical properties SrBi//2Ta//2O//9/CeO//2/Si and SrBi//2Ta//2O//9/Si structures | 신동석; Kim Yong Tae; Ho Nyung Lee; 이창우; 최인훈 |
| - | Effect of insulator on memory window of metal ferroelectric insulator semiconductor field effect transistor (MEFISFET)-non destructive devices | Kim Yong Tae; 이창우; 신동석; Ho Nyung Lee |
| - | Effects of morphological changes of Pt/SrBi//2Ta//2O//9 interface on the electrical properties of ferroelectric capacitor | 신동석; Ho Nyung Lee; Kim Yong Tae; 최인훈 |
| - | Electrical properties of the Pt/SrBi//2Ta//2O//9/CeO//2/Si and Pt/SBi/Si structures | 한용희; Kim Yong Tae; Ho Nyung Lee; 신동석; 최인훈 |
| - | Influence of rapid thermal annealing of cerium oxide on the morphological and electrical properties of metal/ferroelectric/insulator/semiconductor capacitor | Ho Nyung Lee; 신동석; Kim Yong Tae; 조성호 |
| - | Low temperature crystallization of SrBi2Ta2O9 film by excimer laser irradiation | 설광수; Y. Ohki; H. Hiramatsu; 신동석; 최인훈; Kim Yong Tae |
| - | The changes of the properties of Pt/SrBi2Ta2O9/Pt capacitors and Pt/SrBi2Ta2O9/CeO2/Si structures by post-annealing and their origin | 신동석; 최훈상; Ho Nyung Lee; Kim Yong Tae; PARK YOUNG KYUN; 최인훈 |
| - | Top electrode annealing effects in Pt/SrBi//2Ta//2O//9/CeO//2/Si structure | 신동석; Kim Yong Tae; 최인훈; 조성호 |
| - | (Undefined) | 신동석; Ho Nyung Lee; Kim Yong Tae; 최인훈 |
