| 2010-07-08 | 2형 양자우물을 포함하는 ｐ형 반도체 소자 및 그 제조 방법. | 구현철; 김형준; 송진동; 신상훈; 장준연; 한석희 |
| 1997-02 | A method of making a holographic screen using a retroreflex plate | 전형욱; 이혁수; 최용진; 손정영; 신상훈; 김성규; 이기홍; 이제인; 윤재형 |
| 2005-07 | A study of the cardiovascular aginig effect on the pulse shape | 신상훈; 임혜원; 박영재; 박영배 |
| 2004-12 | A study of the pu | 신상훈; 박영배; 임혜원; 김기왕 |
| 2005-07 | A study of the pulse diagnosis research trend in China II: clinical application | 신상훈; 김기왕; 임혜원; 박영재; 박영배 |
| 2011-08 | AlSb 화합물 반도체 유전함수의 온도의존성 연구 | 정용우; 변준석; 황순용; 김태중; 김영동; 신상훈; 송진동 |
| 1999-12 | Analysis of viewing zone parameters by a full color transmission type holographic screens with a stereoscopic image projection | 반지은; 신상훈; 최용진; V. I. Bobrinev; 손정영 |
| 2012-07 | Analytic representation of the dielectric functions of InAsxSb1-x alloys in the parametric model | 황순용; 김태중; 변준석; Nilesh S. Barange; Mangesh S. Diware; 김영동; David E. Aspnes; 윤재진; 신상훈; 송진동 |
| 2015-06 | Bioresorbable Electronic Stent Integrated with Therapeutic Nanoparticles for Endovascular Diseases | 손동희; 이종하; 이동준; 가파리 루즈벳; 유수민; 김석주; 이지은; 조혜림; 윤선호; 양시수안; 이승현; 키아오 슈타오; 릉대순; 신상훈; 송준걸; 김재민; 김태호; 이학용; 김종훈; 소민; 이노현; 황철성; 남상욱; 루난슈; 현택환; 최승홍; 김대형 |
| 2013-06 | Combine p-type GaSb 2DHG hole device with n-type InGaAs channel for III-V CMOS | 신상훈; 송진동 |
| 2010-09 | Dielectric functions and interband transitions of In1− | J. J. Yoon; T. J. Kim; Y. W. Jung; D. E. Aspnes; Y. D. Kim; H. J. Kim; Y. C. Chang; 신상훈; 송진동 |
| 2013-11 | Dielectric functions of In1-xAlxSb alloys for arbitrary compositions with parametric modeling | Mangesh S. Diware; Tae Jung Kim; 윤재진; 닐리쉬; Jun Seok Byun; Han Gyeol Park; Young Dong Kim; 신상훈; 송진동 |
| 2011-08 | Dielectric response of AlP by in-situ ellipsometry | 정용우; J.S. Byun; S.Y. Hwang; Y.D. Kim; 신상훈; 송진동 |
| 2009-06 | Dielectric response of AlSb from 0.7 to 5.0 eV determined by in situ ellipsometry | 정용우; T. H. Ghong; J. S. Byun; Y. D. Kim; H. J. Kim; Y. C. Chang; 신상훈; 송진동 |
| 2007-12 | Effect of AlSb buffer layer and InAs channel thickness on electrical properties of InAs/AlSb-based 2 DEG HEMT structure | 신상훈; 임주영; 송진동; 한석희; 김태근 |
| 2008-11 | Effects of the AlSb buffer layer and the InAs channel thickness on the electrical properties of InAs/AlSb-based 2-DEG HEMT structures | 신상훈; 임주영; 송진동; 김형준; 한석희; T. G. Kim |
| 2005-08 | Electrical properties of ZnO:Al2O3 transparent conductive oxide thin film on polymer substrate | 신상훈; 김태훈; 김진혁; 이전국 |
| 2011-07 | Ellipsometric study of dielectric response of AlP | Soon Yong Hwang; 정용우; Jun Seok Byun; Seung-Ho Han; Han Gyeol Park; Young Dong Kim; 신상훈; 송진동 |
| 2014-08 | Ellipsometric Study of the Temperature Dependences of the Dielectric Function and the Critical Points of AlSb at Temperatures from 300 to 803 K | 박한결; 김태정; 황순영; 김준영; 최준호; 김영동; 신상훈; 송진동 |
| 2010-04 | Formation of low density GaAs quantum dots by droplet epitaxy method | 이은혜; 송진동; 김수연; 신상훈; 한일기; 이정일; 김종수; 장수경 |
| 2013-04 | Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device | 박윤호; 신상훈; 송진동; 장준연; 한석희; 최헌진; 구현철 |
| 2011-02 | Growth of 2dimensional hole gas (2DHG) with GaSb channel using III-V materials on InP substrate | 신상훈; 송진동; 한석희; 김태근 |
| 2010-08 | Growth of high quality InSb on InxAl1-xSb grading buffer on GaAs (x=1→0) | 신상훈; 송진동; 한석희; 김태근 |
| 2008-05 | Growth of high-quality InSb layers on GaAs using InAs quantum dots as a lattice-mismatch compensation layer for the appication to high mobility magnetic devices.(60,400cm2/Vs) | 송진동; 임주영; 신상훈; 장준연; 최원준 |
| 2011-07 | GROWTH OF HIGH-QUALITY THIN InSb FILMS (<0.6 μm) GROWN ON GaAs SUBSTRATE WITH InxAl1-xSb CONTINUOUSLY GRADED BUFFER | 신상훈; 송진동; 김태근 |
| 2011-07 | Growth of Sb-based compound semiconductor nano structures for the application to high-speed electronics and infrared sensors | 송진동; 임주영; 신상훈; 김수연; 이은혜 |
| 2011-12 | Growth Temperature Effects of In0.4Al0.6As Buffer Layer on the Luminescence Properties of InGaAs/InAlAs Quantum Well Structures | 김희연; 류미이; 임주영; 신상훈; 김수연; 송진동 |
| 2010-05 | Growth Temperature Effects of In0.5Al0.5As Buffer Layer on the Optical Properties of In0.5Ga0.5As/In0.5Al0.5As Multiple Quantum Wells Grown on GaAs | 김희연; 오현지; 안상우; 류미이; 임주영; 신상훈; 김수연; 송진동 |
| 2008-06 | High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n- doping on InSb/GaAs | 송진동; 김형준; 신상훈; 김수연 |
| 2008-12 | High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n-doping on InSb/GaAs | 신상훈; 송진동; 김수연; 김형준; 장준연; 한석희 |
