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Showing results 1 to 30 of 55

Issue DateTitleAuthor(s)
2010-04A nano-patterning technique utilizing surface GaAs clusters as a mask for mesa structure fabrication하승규; 송진동; 임주영; 김종수; 사미르 보누아흐; 파브리스 도나티니; 레시 당; 장필립 푸아제; 최원준; 이정일
2010-02AlGaAs 위에 성장한 저밀도 InAs/AlGaAs 양자점조남기; 하승규; 박성준; 임주영; 송진동; 최원준; 이정일
2006-03Anomalous effect of hydrogenation on the optical characterization In0.5Ga0.5As/GaAs quantum dot infrared photodetectors임주영; 송진동; 최원준; 조운조; 이정일; 양해석
2006-07Characterization of In0.5Ga0.5As quantum dot infrared photodetector (QDIP) structures treated with post-growth processes임주영; 남형도; 송진동; 최원준; 이정일; H. S. Yang
2009-10Characterization of individual GaAs droplet QDs하승규; 사미르 보누아흐; 파브리스 도나티니; 송진동; 임주영; 김종수; 최원준; 이정일; 레시 당; 장필립 푸아제
2009-09Characterization of individual GaAs droplet QDs by cathodo- and photoluminescence하승규; 사미르 보누아흐; 파브리스 도나티니; 송진동; 임주영; 김종수; 최원준; 이정일; 레시 당; 장필립 푸아제
2007-08Comparative Study on 980-nm Quantum-dot and Quantum-well Laser Diode김광웅; 정경욱; 유성필; 조남기; 임주영; 박성준; 송진동; 최원준; 이정일; 박정호
2009-08Droplet epitaxy 방법으로 형성된 저밀도 GaAs 양자점의 광발광 및 음극선발광 특성분석하승규; 임주영; 송진동; 김종수; 사미르 보누아흐; 파브리스 도나티니; 레시 당; 장필립 푸아제; 최원준; 이정일
2007-12Effect of AlSb buffer layer and InAs channel thickness on electrical properties of InAs/AlSb-based 2 DEG HEMT structure신상훈; 임주영; 송진동; 한석희; 김태근
2010-03Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy유성필; 조남기; 임주영; 최원준; 송진동; 이정일; Y.T. LEE; C.G. PARK
2009-10Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots유성필; 조남기; 임주영; 임아람; 최원준; 송진동; 이정일; 이용탁
2010-02Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate임주영; 송진동; 최원준; H. S. Yang
2009-10Effect of Modified Growth Method on the Structural and Optical Properties of InAs/GaAs Quantum Dots for Controlling Density유성필; 조남기; 임주영; 이혜진; 최원준; 송진동; 이정일; 이용탁
2012-08Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs임주영; 송진동; 양해석
2008-11Effects of the AlSb buffer layer and the InAs channel thickness on the electrical properties of InAs/AlSb-based 2-DEG HEMT structures신상훈; 임주영; 송진동; 김형준; 한석희; T. G. Kim
2014-04Fabrication of GaAs/Al0.3Ga0.7As Multiple Quantum Well Nanostructures on (100) Si Substrate Using a 1-nm InAs Relief Layer오현지; 박성준; 임주영; N.K Cho; 송진동; W. Lee; 이유종; 명재민; 최원준
2010-04Formation of low density InAs QDs in indirect bandgap Al(Ga)As matrix (λ~790nm)조남기; 하승규; 박성준; 임주영; 송진동; 최원준; 이정일
2007-08GaAs기판상에 나노 구조를 이용하여 격자상수차이를 극복하여 성장된 1um 두께의 고품질 InSb (47,000cm2/Vs)송진동; 임주영; 최원준; 장준연; 한석희
2011-07Growth and characteristics of AlGaAs/GaAs multi quantum well on Si박성준; 임주영; 오현지; 김민태; 송진동; Jae Min Myuong; 이유종; 최원준
2011-01Growth and characterization of low density droplet GaAs quantum dots for single photon sources하승규; 송진동; 임주영; S. Bounouar; F. Donatini; L. S. Dang; J. P. Poizat; J. S. Kim; 최원준; 한일기; 이정일
2011-10Growth of GaAs on Si substrate using InAs defect reduction layer최원준; 조남기; 임주영; 송진동; 이정일
2011-09Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots임주영; 송진동; 최원준; 안재평; 양해승
2008-05Growth of high-quality InSb layers on GaAs using InAs quantum dots as a lattice-mismatch compensation layer for the appication to high mobility magnetic devices.(60,400cm2/Vs)송진동; 임주영; 신상훈; 장준연; 최원준
2011-07Growth of Sb-based compound semiconductor nano structures for the application to high-speed electronics and infrared sensors송진동; 임주영; 신상훈; 김수연; 이은혜
2010-04Growth of three-dimensional InAs islands on (001) Si Substrate임주영; 조남기; 송진동; 최원준; 이정일; 양해석
2011-12Growth Temperature Effects of In0.4Al0.6As Buffer Layer on the Luminescence Properties of InGaAs/InAlAs Quantum Well Structures김희연; 류미이; 임주영; 신상훈; 김수연; 송진동
2010-05Growth Temperature Effects of In0.5Al0.5As Buffer Layer on the Optical Properties of In0.5Ga0.5As/In0.5Al0.5As Multiple Quantum Wells Grown on GaAs김희연; 오현지; 안상우; 류미이; 임주영; 신상훈; 김수연; 송진동
2008-07InAs 2DEG HEMT on GaAs and InP with Sb- and P- cluster MBE for SPIN-FET and InSb on GaAs for magnetic sensor송진동; 김형준; 임주영; 신상훈; 김경호; 장준연; 이승웅
2008-08InAs 2DEG HEMT on GaAs and InP with Sb- and P- cluster MBE for SPIN-FET and InSb on GaAs for magnetic sensor송진동; 김형준; 임주영; 신상훈; 김경호; 장준연
2020-03Intrinsically p-type cuprous iodide semiconductor for hybrid light-emitting diodes장준연; 송진동; 장혜정; 강수석; 안도열; 임주영; S.H. Yang; S. Ko; S.H. Park; S.J. Park; D.S. KIm

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