| 2010-09 | Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 ℃ | 정유진; 전윤수; 이상렬 |
| 2010-08 | Asymmetric staggered electrode for oxide thin film transistors | 정유진; 전윤수; 조경철; 김승한; 이상렬 |
| 2010-08 | Comprehensive study on the bias and temperature induced instability of ZnO based thin film transistors | 이상렬; 정유진; 김승한; 전윤수 |
| 2010-07 | DBD방법으로 도핑한 질소의 Zn 산화물 박막 트랜지스터에 대한 영향성 | 전윤수; 정유진; 조경철; 이상렬 |
| 2011-01 | Design of Noncoplanar Diagonal Electrode Structure for Oxide Thin-film Transistor | 정유진; 전용우; 전윤수; 김대환; 이상렬 |
| 2011-03 | Effect of gallium contents on the threshold voltage shift of solution-processed Ga-doped Si-In-Zn-O thin film transistor | 최준영; 박기호; 전윤수; 김상식; 이상렬 |
| 2011-07 | Effect of oxygen on the threshold voltage of a-IGZO TFT | 정유진; 전윤수; 김승한; 이상렬 |
| 2011-02 | Effect of trap density on the stability of SiInZnO thin-film transistor under temperature and bias-induced stress | 정유진; 전윤수; 이상렬 |
| 2010-08 | Effects of electrode structures on the electrical properties of amorphous ZnO thin film transistor | 전윤수; 정유진; 조경철; 이상렬 |
| 2011-07 | Effects of gate insulators on the performance of a-IGZO TFT fabricated at room-temperature | 전윤수; 장성필; 이상렬 |
| 2010-08 | Efficient suppression of the anomalous behaviors in a-IGZO TFT with HfO2 sandwiched by Al2O3 layers | 조경철; 정유진; 전윤수; 주병권; 이상렬 |
| 2010-08 | Evaluation of acceptor binding energy of nitrogen doped ZnO thin films grown by dielectric barrier discharge in pulsed laser deposition | 이득희; 전윤수; 박기호; 김상식; 이상렬 |
| 2010-10 | High Performance of Thin Film Transistor using Novel Dual Electrode Structure | 조경철; 정유진; 전윤수; 이상렬 |
| 2010-07 | Improvement of bias stability of indium zinc oxide TFTs by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering | 정유진; 조경철; 김승한; 전윤수; 이상렬 |
| 2011-08 | Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering | 정유진; 전윤수; 김승한; 이상렬 |
| 2010-08 | Instability induced by air in amorphous Zn-Sn-O (ZTO) thin film transistor | 김승한; 전윤수; 정유진; 조경철; 김창일; 이상렬 |
| 2011-04 | Localization effect of a current-path in amorphous In-Ga-Zn-O thin film transistors with a highly doped buried-layer | 정유진; 전용우; 전윤수; 김대환; 이상렬 |
| 2011-06 | N-dopping effect on the stability of binary, ternary, and quanternary ZnO TFT | 전윤수; 박기호; 최준영; 이상렬 |
| 2010-11 | Nitrogen doping effect on long-term stability of zinc oxide TFTs using DBD-PLD system | 전윤수; 정유진; 정다운; 이상렬 |
| 2011-03 | Nitrogen doping effect on the stability of ZnO thin film transistors using pulsed laser deposition with dielectric barrier discharge method | 전윤수; 최준영; 유동윤; 김보슬; 이상렬 |
| 2010-06 | Novel dual electrode structure for thin film transistor to enhance the performance of the TFT | 조경철; 정유진; 전윤수; 주병권; 이상렬 |
| 2010-06 | Role of Hf in amorphous oxide thin film transistors fabricated by rf-magnetron sputtering | 정유진; 전윤수; 조경철; 김승한; 정다운; 이상렬 |
| 2010-06 | Stability enhancement of amorphous zinc oxide thin film transistors fabricated by pulsed laser deposition with DBD | 전윤수; 정유진; 조경철; 김승한; 정다운; 이상렬 |
| 2010-10 | Temperature Induced Instability of Passivation-Free Amorphous Indium Zinc Oxide (a-IZO) Thin Film Transistor | 정유진; 전윤수; 조경철; 김승한; 정다운; 이상렬 |
| 2010-11 | The characteristics changing of HfInZnO TFT with process conditions by RF sputter | 정다운; 정유진; 김승한; 전윤수; 이상렬 |
| 2011-06 | Variation of electrical properties in solution processed AlSiInZnO thin film transistors with aluminium composition ratio | 박기호; 최준영; 전윤수; 주병권; 이상렬 |
