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Issue DateTitleAuthor(s)
2023-06Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films전지훈; Kuk, Song-Hyeon; 조아진; Baek, Seung-Hyub; Kim, Sang-Hyeon; Kim, Seong Keun
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