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Showing results 1 to 4 of 4

Issue DateTitleAuthor(s)
2006-09-01An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrodeKang, Dae-Hwan; Kim, In Ho; Jeong, Jeung-hyun; Cheong, Byung-ki; Ahn, Dong-Ho; Lee, Dongbok; Kim, Hyun-Mi; Kim, Ki-Bum; Kim, Soo-Hyun
2012-10Fast and scalable memory characteristics of Ge-doped SbTe phase change materialsCheong, Byung-ki; Lee, Suyoun; Jeong, Jeung-hyun; Park, Sohee; Han, Seungwu; Wu, Zhe; Ahn, Dong-Ho
2007-09High speed phase change random access memory with (Ge1Sb2Te4)(0.9)(Sn1Bi2Te4)(0.1) complete solid solutionAhn, Dong-Ho; Lee, Tae-Yon; Lee, Dong-Bok; Yim, Sung-Soo; Wi, Jung-Sub; Jin, Kyung-Bae; Lee, Min-Hyun; Kim, Ki-Bum; Kang, Dae-Hwan; Jeong, Han-ju; Cheong, Byung-ki
2005-09Kinetic Characteristics of FCC to Hexagonal Transformation in (Ge1Sb2Te4)(0.8)(Sn1Bi2Te4)(0.2) Chalcogenide Alloy for Phase Change MemoryAhn, Dong-Ho; Kim, Hyun-Mi; Lee, Min-Hyun; Kang, Dae-Hwan; Cheong, Byung-ki; Kim, Ki-Bum
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