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Showing results 1 to 10 of 10

Issue Date	Title	Author(s)
-	Characteristics of Er-Implanted GaN	Chang-Sik Son; Kim, Seong Il; Kim, Yong Tae; Akihiro Wakahara; Homero C. Lopez; Ho Jung Chang
-	Crystal extension of δ phase in SbxTe100-x phase change binary alloy along longitudinal axis without phase separation	Sun Chang Woo; Lee Joung Yong; Youm Min Soo; Kim, Yong Tae; Akihiro Wakahara
-	Effect of Al composition on luminescence properties of Eu-doped AlGaN	Akira Yoshida; Akihiro Wakahara; Yasuo Nakanishi; Hiroshi Okada; Takeshi Ohshima; Hisayoshi Itoh; Kim, Yong Tae
-	Effects of Eu implantation on red light emission of group III-nitrides	Kim, Seong Il; Kim, Yong Tae; Akihiro Wakahara; Akira Yoshida
-	Fabrication and characterization of rare-earth doped AlGaN for light source application of bio-MEMS	Akihiro Wakahara; Tetsuya Fujiwara; Yasuo Hakanishi; Hiroshi Okada; Akira Yoshida; Takeshi Ohshima; Tomihiro Kamiya; Kim, Yong Tae
-	High luminescence efficiency of Eu-doped GaN	Kim, Seong Il; Ji-Ho Park; Akihiro Wakahara; Kim, Yong Tae
-	High luminescence efficiency of Eu-Doped GaN	Kim, Yong Tae; Park, Ji-Ho; Akihiro Wakahara
-	In situ transmission electron microscopy study on the nucleation and grain growth of Ge2Sb2Te5 thin films	Kim, Yong Tae; Park Yu Jin; Lee Jeong Yong; Kim, Seong Il; Kim, Young Hwan; Akihiro Wakahara
-	Stress evolution and diffusion barrier performance of La0.67Sr0.33MnO3 (LSMO)/WCN/Si structure	Chang Woo Lee; Kim, Yong Tae; Akihiro Wakahara; KIM Hee Joon
-	Surface energy and equilibrium shape of hexagonal structured Ge2Sb2Te5 grain	Kim, Yong Tae; Park Yu Jin; Youm Min Soo; Akihiro Wakahara

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