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| Issue Date | Title | Author(s) |
|---|---|---|
| 2025-05 | Improving the memory window of a ferroelectric thin film transistor using an atomic layer deposited HfNx interfacial layer | Nam, Hyun Woo; Lee, Jae Hoon; Ryoo, Seung Kyu; Shin, Seong Jae; Ye, Kun Hee; Kim, Kyung Do; Byun, Seung yong; Lee, In Soo; Lee, Suk Hyun; Song, Jae Hee; Choi, Jung hae; Hwang, Cheol Seong |