Showing results 1 to 3 of 3
Issue Date | Title | Author(s) |
---|---|---|
1993-03 | CONSTANT CAPACITANCE TECHNIQUE TO STUDY ELECTRICAL INSTABILITIES IN INP MIS PROVIDED BY PECVD SILICON-NITRIDE | KIM, CH; KWON, SD; CHOE, BD; HAN, IK; LEE, JI; KANG, KN; PARK, HL; LIM, H |
1992-11-15 | STUDY OF CHARGE TRAPPING INSTABILITIES IN A SILICON-NITRIDE INDIUM-PHOSPHIDE METAL-INSULATOR-SEMICONDUCTOR STRUCTURE BY THE CONSTANT-CAPACITANCE METHOD | KIM, CH; CHOE, BD; LIM, H; HAN, IK; LEE, JI; KANG, KN |
1993-10 | STUDY ON THE LOW-FIELD CHARGE-TRAPPING PHENOMENA IN THE SILICON-NITRIDE INP STRUCTURE | KIM, CH; KWON, SD; CHOE, BD; HAN, IK; LEE, JI; KANG, KN; HER, J; LIM, H |