| 2024-09 | Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs | An, Seong Ui; Ahn, Dae-Hwan; Ju, Gijun; Chen, Simin; Ji, Yo Seop; Han, Jae-Hoon; Kim, Jaekyun; Kim, Younghyun |
| 2024-09 | First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s | Noh, Tae Hyeon; Chen, Simin; Kim, Hyo-Bae; Jin, Taewon; Park, Seoung Min; An, Seong Ui; Sun, Xinkai; Kim, Jaekyun; Han, Jae-Hoon; Ahn, Ji-Hoon; Ahn, Dae-Hwan; Kim, Younghyun |
| 2024-04 | High Performance Indium-Tin-Zinc-Oxide Thin-Film Transistor with Hexamethyldisilazane Passivation | Sun, Xinkai; Han, Jae-Hoon; Xiao, Zhenyuan; Chen, Simin; Jin, Taewon; Noh, Taehyeon; Park, Seoungmin; Kim, Jaekyun; Jin, Jidong; Kim, Younghyun |
| 2023 | Simulation of a Recessed Channel Ferroelectric-Gate Field-Effect Transistor with a Dual Ferroelectric Gate Stack for Memory Application | Chen, Simin; Ahn, Dae-Hwan; An, Seong Ui; Kim, Younghyun |
| 2024-07 | TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications | Chen, Simin; Ahn, Dae-Hwan; An, Seong Ui; Noh, Tae Hyeon; Kim, Younghyun |
