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Issue DateTitleAuthor(s)
2006-05-01Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistorsPark, Jaehoo; Park, Tae Joo; Cho, Moonju; Kim, Seong Keun; Hong, Sug Hun; Kim, Jeong Hwan; Seo, Minha; Hwang, Cheol Seong; Won, Jeong Yeon; Jeong, Ranju; Choi, Jung-Hae
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