| 2010-10 | A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 mu m surface emitting laser diodes | Cho, N. K.; Kim, K. W.; Song, J. D.; Choi, W. J.; Lee, J. I. |
| 2006-07-28 | Dielectrophoretic alignment of gallium nitride nanowires (GaN NWs) for use in device applications | Kim, T. H.; Lee, S. Y.; Cho, N. K.; Seong, H. K.; Choi, H. J.; Jung, S. W.; Lee, S. K. |
| 2010-03 | Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy | Ryu, S. P.; Cho, N. K.; Lim, J. Y.; Choi, W. J.; Song, J. D.; Lee, J. I.; Lee, Y. T.; Park, C. G. |
| 2007-07-15 | Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diode | Ryu, S. P.; Lee, Y. T.; Cho, N. K.; Choi, W. J.; Song, J. D.; Lee, J. I.; Kwack, H. S.; Cho, Y. H. |
| 2014-04 | Fabrication of GaAs/Al0.3Ga0.7As Multiple Quantum Well Nanostructures on (100) Si Substrate Using a 1-nm InAs Relief Layer | Oh, H. J.; Park, S. J.; Lim, J. Y.; Cho, N. K.; Song, J. D.; Lee, W.; Lee, Y. J.; Myoung, J. M.; Choi, W. J. |
| 2009-10-19 | Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation | Dasika, V. D.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I.; Goldman, R. S. |
| 2009-07-01 | Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots | Dasika, V. D.; Goldman, R. S.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I. |
| 2011-08 | Quantum dot-like effect in InGaAs/GaAs quantum well | Abdellatif, M. H.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I. |
