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Showing results 1 to 9 of 9

Issue Date	Title	Author(s)
2019-04-01	Characteristics of band modulation FET on sub 10 nm SOI	Kwon, Sehyun; Navarro, Carlos; Gamiz, Francisco; Cristoloveanu, Sorin; Galy, Phileppe; Choi, Minho; Kim, Yong Tae; Ahn, Jinho
2017-12	Effects of an In Vacancy on Local Distortion of Fast Phase Transition in Bi-doped In3SbTe2	Choi, Minho; Choi, Heechae; Kim, Seungchul; Ahn, Jinho; Kim, Yong Tae
2017-11	Effects of Y Dopant on Lattice Distortion and Electrical Properties of In3SbTe2 Phase-Change Material	Choi, Minho; Choi, Heechae; Kwon, Sehyun; Kim, Seungchul; Lee, Kwang-Ryeol; Ahn, Jinho; Kim, Yong Tae
2019-04	Interface-Driven Phase Transition of Phase-Change Material	Choi, Minho; Choi, Heechae; Ahn, Jinho; Kim, Yong Tae
2015-08-11	Lattice Distortion in In3SbTe2 Phase Change Material with Substitutional Bi	Choi, Minho; Choi, Heechae; Kim, Seungchul; Ahn, Jinho; Kim, Yong Tae
2019-09	Material design for Ge2Sb2Te5 phase-change material with thermal stability and lattice distortion	Choi, Minho; Choi, Heechae; Ahn, Jinho; Kim, Yong Tae
2019-04	New material design of fast switching phase change memory as the benchmark for FD-SOI devices	Kim, Yong Tae; Choi, Minho; Gamiz, Francisco; Jhon, Young Min; Kwon, Sehyun
2023-06	Single Quantum Dot Selection and Tailor-Made Photonic Device Integration using a Nanoscale-Focus Pinspot	Choi, Minho; Lee, Mireu; Park, Sung-Yul L.; Kim, Byung Su; Jun, Seongmoon; Park, Suk In; Song, Jin Dong; Ko, Young-Ho; Cho, Yong-Hoon
2019-04-01	Understanding of relationship between dopant and substitutional site to develop novel phase-change materials based on In3SbTe2	Choi, Minho; Choi, Heechae; Ahn, Jinho; Kim, Yong Tae

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