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Issue DateTitleAuthor(s)
2022-02-01Y-doped HfO2 deposited by atomic layer deposition using a cocktail precursor for DRAM capacitor dielectric applicationKim, Jenam; Kim, Byung Seok; Lee, Ae Jin; Han, Dong Hee; Hwang, Ji Hyeon; Kim, Youngjin; Song, Ki-Chang; Oh, Hansol; Kim, Sangho; Park, Yongjoo; Jeon, Woojin
1

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