Showing results 1 to 4 of 4
Issue Date | Title | Author(s) |
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2023-12 | Effects of Al2O3 Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface Properties | Ko, Kyul; Ahn, Daehwan; Suh, Hoyoung; Ju, Byeong-Kwon; Han, Jae Hoon |
2021-06 | Electrical Analysis for Wafer-Bonded Interfaces of p(+)GaAs/n(+)InGaAs and p(+)InGaAs/n(+)InGaAs | Geum, Dae-Myeong; Kim, Seong Kwang; Lim, Hyeong-Rak; Park, Juhyuk; Jeong, Jaeyong; Han, Jae Hoon; Choi, Won Jun; Kim, Hyo-Jin; Kim, Sanghyeon |
2022-06 | Energy-Efficient III-V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing | Daehwan, Ahn; HU, SU MAN; Ko, Kyul; Park, Dong Hee; Suh, Ho young; Kim, Gyu-Tae; Han, Jae Hoon; SONG, JIN DONG; Jeong, Yeon Joo |
2023-06-11 | Strategy for 3D Ferroelectric Transistor: Critical Surface Orientation Dependence of HfZrOx on Si | Kuk, Song-Hyeon; Han, Jae Hoon; Han, Jae-Hoon; Kim, Bong Ho; Kim, Joon Pyo; Kim, Sang-Hyeon |