| 2023-03 | Effective Schottky barrier height and interface trap density reduction engineering using 2-dimensional reduced graphene oxide interlayer for metal-interlayer-semiconductor contact structure | Song, Sungjoo; Kim, Seung-Hwan; Kim, Seung-Geun; Han, Kyu-Hyun; Kim, Hyung-jun; Yu, Hyun-Yong |
| 2023-06 | Effective threshold voltage modulation technique for steep-slope 2D atomic threshold switching field-effect transistor | Hwang, Seong-Hyun; Kim, Seung-Hwan; Kim, Seung-Geun; Kim, Min-Su; Han, Kyu-Hyun; Song, Sungjoo; Kim, Jong-Hyun; Park, Euyjin; Jin, Dong-Gyu; Yu, Hyun-Yong |
| 2023-07 | Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process After Silicidation of TiSi2 Through Ta Interlayer for Diffusion Barrier | Kim, Min-Su; Hwang, Seong-Hyun; Kim, Seung-Hwan; Kim, Jong-Hyun; Park, Euyjin; Han, Kyu-Hyun; Yu, Hyun-Yong |
| 2023-03 | Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two-Dimensional PtSe2 Insertion Layer | Kim, Min-Su; Park, Euyjin; Kim, Seung-Geun; Park, Jae-Hyeun; Kim, Seung-Hwan; Han, Kyu-Hyun; Yu, Hyun-Yong |
| 2023-07 | Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide | Kim, Jong-Hyun; Kim, Seung-Geun; Kim, Seung-Hwan; Han, Kyu-Hyun; Kim, Jiyoung; Yu, Hyun-Yong |
| 2023-12 | In-Depth Analysis on Self Alignment Effect of the Fermi-Level Using Graphene on Both n- and p-Type Semiconductors | Song, Sungjoo; Kim, Seung-Hwan; Han, Kyu-Hyun; Kim, Hyung-jun; Yu, Hyun-Yong |
| 2024-10 | Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe2) Transistor: Approaching Schottky-Mott Limit | Park, Euyjin; Kim, Seung-Hwan; Min, Seong-Ji; Han, Kyu-Hyun; Kim, Jong-Hyun; Kim, Seung-Geun; Ahn, Tae-Hang; Yu, Hyun-Yong |
