| 2023-02 | Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric-Like C-Axis-Aligned Crystalline InGaSnO Semiconductor Thin-Film Transistors for Highly Integrated Neuromorphic Electronics | Lim, Taebin; Lee, Suhui; Lee, Jiseob; Choi, HyungJin; Jung, Byunglib; Baek, SeungHyub; Jang, Jin |
| 1997-08 | Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel | Jung, Jae Hoon; Ju, Byeong Kwon; Kim, Hoon; Oh, Myung Hwan; Chung, Suk Jae; Jang, Jin |
| 1996-07 | Emission stability of DLC coated metal-tips FEA | Jung, Jae Hoon; Ju, Byeong Kwon; Lee, Yun Hi; Park, Kyu Chang; Jang, Jin; Jung, Yu Ho; Kim, Chul Ju; Oh, Myung Hwan |
| 2000-01 | Glass-to-glass anodic bonding for high vacuum packaging of microelectronics and its stability | DUCK, JUNG LEE; Ju, Byeong-Kwon; Lee, Yun-Hi; Jang, Jin; Oh, Myung-Hwan |
| 2007-02 | High mobility organic transistor patterned by the shadow-mask with all structure on a plastic substrate | Lee, Joo-Won; Ju, Byeong-Kwon; Jang, Jin; Yoon, Young-Soo; Kim, Jai-Kyeong |
| 1997-02 | Improvement of electron emission stability of Mo-tip FEAs by DLC coating | Jung, Jae Hoon; Ju, Byeong Kwon; Lee, Yun Hi; Oh, Myung Hwan; Jang, Jin |
| 1998-07 | Influences of ambient gases upon emission characteristics of Mo-FEAs during frit sealing process | Kim, Hoon; Ju, Byeong Kwon; Lee, Kwang Bae; Kang, Moon Sik; Jang, Jin; Oh, Myung Hwan |
| 2023-09 | Multifunctional Crystalline InGaSnO Phototransistor Exhibiting Photosensing and Photosynaptic Behavior Using Oxygen Vacancy Engineering | Lim, Taebin; Lee, Jiseob; Woo, Dong Yeon; Kwak, Joon Young; Jang, Jin |
