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Issue DateTitleAuthor(s)
2013-11Variation in the threshold voltage of amorphous-In2Ga2ZnO7 thin-film transistors by ultrathin Al2O3 passivation layerRha, Sang Ho; Kim, Un Ki; Jung, Jisim; Hwang, Eun Suk; Lee, Seung Jun; Jean, Woojin; Yoo, Yeon Woo; Choi, Jung-Hae; Hwang, Cheol Seong
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