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Issue DateTitleAuthor(s)
2007-09High speed phase change random access memory with (Ge1Sb2Te4)(0.9)(Sn1Bi2Te4)(0.1) complete solid solutionAhn, Dong-Ho; Lee, Tae-Yon; Lee, Dong-Bok; Yim, Sung-Soo; Wi, Jung-Sub; Jin, Kyung-Bae; Lee, Min-Hyun; Kim, Ki-Bum; Kang, Dae-Hwan; Jeong, Han-ju; Cheong, Byung-ki
1

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