2001-06 | Crystallographic and magnetic properties of nanostructured hematite synthesized by the sol-gel process | Kim, JG; Han, KH; Lee, CH; Jeong, JY; Shin, KH |
1998-12 | Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers | Jeong, JY; Im, S; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
1998-12 | Defect vs. nanocrystal luminescence emitted in Si-implanted SiO2 layers | Jeong, JY; Im, S; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
1999-02-15 | Enhancing defect-related photoluminescence by hot implantation into SiO2 layers | Im, S; Jeong, JY; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
2000-05-01 | Feasibility of FePt longitudinal recording media for ultrahigh density recording | Bae, SY; Shin, KH; Jeong, JY; Kim, JG |
2001-01-15 | Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si | Lee, WS; Jeong, JY; Kim, HB; Chae, KH; Whang, CN; Im, S; Song, JH |
1999-07 | Photoluminescence emitted from Si vs. Ge nanocrystals embedded in a SiO2 matrix | Jeong, JY; Im, SI; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
2000-01-19 | Photoluminescence from Si ion irradiated SiO2/Si/SiO2 films with elevated substrate temperature | Kim, HB; Son, JH; Chae, KH; Jeong, JY; Lee, WS; Im, S; Song, JH; Whang, CN |
1999-07 | Photoluminescence induced by Si-implantation into SiO2 layers at elevated temperatures | Kim, HB; Kim, TG; Chae, KH; Whang, CN; Jeong, JY; Oh, MS; Im, S; Song, JB |
1998-12 | The origin of photoluminescence in Ge-implanted SiO2 layers | Kim, HB; Chae, KH; Whang, CN; Jeong, JY; Oh, MS; Im, S; Song, JH |
2000-01-19 | Violet and orange luminescence from Ge-implanted SiO2 layers | Lee, WS; Jeong, JY; Kim, HB; Chae, KH; Whang, CN; Im, S; Song, JH |
1999-11 | Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers | Chae, KH; Son, JH; Chang, GS; Kim, HB; Jeong, JY; Im, S; Song, JH; Kim, KJ; Kim, HK; Whang, CN |