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Showing results 1 to 4 of 4

Issue DateTitleAuthor(s)
-Improvment of the high-temperature characteristics of 1.52 ㎛ InGaAs laser with (InAlAs)0.4(InGaAs)0.6 short-period superlattice barriersHeo, Duchang; Song, Jin Dong; Choi, Won June; Lee, Jung Il; Lee, Young Tak; Jeong, Jichai; Han, Il Ki
1996-11Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layerKim, Tae Geun; Kim, Eun Kyu; Son, Chang-Sik; Kim, Seong-Il; Jeong, Jichai; Min, Suk-Ki; Leem, Si-Jong; Jun, Jong Il; Lee, Hae Wang; Park, Jung-Ho; Seong, Tae-Yeon; Jun, Sung Won
-The characteristics of 3-stacked InGaAs/GaAs QD quantum dot lasers grown by atomic layer molecular beam epitaxyHeo, Duchang; SONG, JIN-DONG; Choi, Won Jun; Lee, Jung Il; Jeong, Jichai; Han, Il Ki
-The study on InGaAsP/InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure허두창; Bae, Hyung Cheol; Lee, Jung Il; Jeong, Jichai; Han, Il Ki
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