Showing results 1 to 5 of 5
Issue Date | Title | Author(s) |
---|---|---|
2005-12 | Copper thin films on PET prepared at ambient temperature by ECR-CVD | Ko, H; Jhin, J; Byun, D; Lee, J; Park, D |
2002-06 | Implantation of N ions on sapphire substrate for improvement of GaN epilayer | Cho, YS; Jhin, J; Park, YJ; Cho, S; Koh, EK; Kim, EK; Kim, G; Byun, D; Min, SK |
2002-06 | Improved crystalline quality of GaN by substrate ion beam pretreatment | Cho, YS; Jhin, J; Koh, EK; Park, YJ; Kim, EK; Kim, G; Min, SK; Byun, D |
2003-06 | Influence of intentionally strained sapphire substrate on GaN epilayers | Kim, J; Park, YJ; Byun, D; Jhin, J; Kang, M; Koh, EK; Moon, Y; Min, SK |
2001-11 | Reduction of defects in GaN on reactive ion beam treated sapphire by annealing | Byun, D; Jhin, J; Cho, S; Kim, J; Lee, SJ; Hong, CH; Kim, G; Choi, WK |