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Issue DateTitleAuthor(s)
2026-02Influence of Gate Dielectric and Channel Scaling on the Low-Frequency Noise Characteristics of InGaZnO Field-Effect TransistorsKim, Taegyu; Kang, Youngjin; Nam, San; Kim, Hyunhee; Kim, Sangyeon; Lee, Je-Jun; Yeon, Eungseon; Hong, Jung Pyo; Lee, Tae-Yon; Hwang, Do Kyung; Kim, Yong-Hoon
1

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