| 2001-06 | Blue and red luminescence from Si ion-irradiated SiO2/Si/SiO2 layers | Son, JH; Kim, TG; Shin, SW; Kim, HB; Lee, WS; Im, S; Song, JH; Whang, CN; Chae, KH |
| 1997-01 | Cohesive energy effects in the atomic transport induced by ion beam mixing | Chang, GS; Jung, SM; Song, JH; Kim, HB; Woo, JJ; Byun, DH; Whang, CN |
| 2004-11-22 | Comparison of visible photoluminescence from Si ion-irradiated SiO2/Si/SiO2 films fabricated by ion beam sputtering deposition and electron beam evaporation | Kim, HB; Son, JH; Whang, CN; Chae, KH |
| 2004-06 | Control of magnetic anisotropy by ion-beam-mixing method under external magnetic field | Yune, JH; Kim, HB; Kim, SH; Whang, CN; Chae, KH |
| 1998-12 | Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers | Jeong, JY; Im, S; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 1998-12 | Defect vs. nanocrystal luminescence emitted in Si-implanted SiO2 layers | Jeong, JY; Im, S; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 2000-10 | Defect-related luminescence and carrier transport in Ge-implanted SiO2 layers on n-Si and p-Si | Lee, WS; Bae, HS; Im, S; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 1998-12 | Effects of BF2 and B implantation-doping on crystalline degradation of pseudomorphic metastable Ge0.06Si0.94 | Im, S; Oh, MS; Joo, MH; Kim, HB; Kim, HK; Song, JH |
| 1999-01 | Effects of BF2+ implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers | Oh, MS; Joo, MH; Im, S; Kim, HB; Kim, HK; Song, JH |
| 2000-08-15 | Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO2 layers | Kim, HB; Kim, TG; Son, JH; Whang, CN; Chae, KH; Lee, WS; Im, S; Song, JH |
| 2004-02 | Ellipsometric spectroscopy study of Ar ion-beam mixed SiO2/Si/SiO2 layers | Kim, HB; Son, JH; Whang, CN; Chae, KH |
| 1999-02-15 | Enhancing defect-related photoluminescence by hot implantation into SiO2 layers | Im, S; Jeong, JY; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 2000-10 | Light-emitting properties of Si-ion-irradiated SiO2/Si/SiO2 layers | Kim, HB; Son, JH; Whang, CN; Chae, KH; Lee, WS; Im, S; Kim, SO; Woo, JJ; Song, JH |
| 1999-02 | MeV He-4(++) channeling studies of epitaxially grown Pt films on Al2O3(0001) | Song, JH; Choi, WK; Kim, KH; Lee, JC; Kim, SC; Kim, HB; Lee, MH; Jeong, K; Whang, CN |
| 2001-01-15 | Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si | Lee, WS; Jeong, JY; Kim, HB; Chae, KH; Whang, CN; Im, S; Song, JH |
| 1998-07 | Oxygen distribution in the heteroepitaxially grown Y2O3 films on Si substrates | Kim, HB; Cho, MH; Whangbo, SW; Whang, CN; Choi, SC; Choi, WK; Song, JH; Kim, SO |
| 1999-07 | Photoluminescence emitted from Si vs. Ge nanocrystals embedded in a SiO2 matrix | Jeong, JY; Im, SI; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 2000-01-19 | Photoluminescence from Si ion irradiated SiO2/Si/SiO2 films with elevated substrate temperature | Kim, HB; Son, JH; Chae, KH; Jeong, JY; Lee, WS; Im, S; Song, JH; Whang, CN |
| 1999-07 | Photoluminescence induced by Si-implantation into SiO2 layers at elevated temperatures | Kim, HB; Kim, TG; Chae, KH; Whang, CN; Jeong, JY; Oh, MS; Im, S; Song, JB |
| 2000-03 | Photoluminescences from Si nanocrystals in ion-beam-mixed Si/SiO2 layers | Chae, KH; Son, JB; Kim, HB; Im, S; Lyo, IW; Whang, CN |
| 2005-07 | Polypropylene/polyamide-6 blends based on commingled plastic wastes | Hong, SM; Hwang, SS; Jeon, BH; Choi, JS; Kim, HB; Lim, ST; Choi, HJ |
| 1998-05-18 | RBS/channeling studies on the heteroepitaxially grown Y2O3 film on Si(100) | Kim, HB; Cho, MH; Whangbo, SW; Whang, CN; Choi, SC; Choi, WK; Song, JH; Kim, SO |
| 1999-06 | Single-chain Fv fragment of catalytic antibody 4f4f with glycosidase activity: Design, expression, and purification | Hwan, JC; Chung, HH; Yu, J; Chang, YJ; Kim, HB; Paek, SH; Shin, DH; Kim, KH |
| 1999-07-01 | Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation | Cho, MH; Ko, DH; Jeong, K; Lyo, IW; Whangbo, SW; Kim, HB; Choi, SC; Song, JH; Cho, SJ; Whang, CN |
| 2004-06 | The control of in-plane magnetic anisotropy by ion irradiation | Kim, SH; Yune, JH; Aeo, JT; Kim, TH; Shin, SW; Kim, HB; Jeong, K; Whang, CN; Chang, GS; Chae, KH |
| 2004-06-30 | The defect-related photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 films | Son, JH; Kim, HB; Whang, CN; Chae, KH |
| 1998-12 | The origin of photoluminescence in Ge-implanted SiO2 layers | Kim, HB; Chae, KH; Whang, CN; Jeong, JY; Oh, MS; Im, S; Song, JH |
| 2000-01-19 | Violet and orange luminescence from Ge-implanted SiO2 layers | Lee, WS; Jeong, JY; Kim, HB; Chae, KH; Whang, CN; Im, S; Song, JH |
| 2004-02 | Visible photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 layers deposited by e-beam evaporation | Son, JH; Kim, HB; Whang, CN; Sung, MC; Jeong, K; Im, S; Chae, KH |
| 1999-11 | Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers | Chae, KH; Son, JH; Chang, GS; Kim, HB; Jeong, JY; Im, S; Song, JH; Kim, KJ; Kim, HK; Whang, CN |
